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X25097M-2.7T5 PDF预览

X25097M-2.7T5

更新时间: 2024-11-15 14:45:39
品牌 Logo 应用领域
XICOR 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
14页 363K
描述
EEPROM, 1KX8, Serial, CMOS, PDSO8, MSOP-8

X25097M-2.7T5 技术参数

生命周期:Obsolete包装说明:TSSOP,
Reach Compliance Code:unknown风险等级:5.84
其他特性:1 MILLION ENDURANCE CYCLES; 100 YEARS DATA RETENTION最大时钟频率 (fCLK):5 MHz
数据保留时间-最小值:100耐久性:1000000 Write/Erase Cycles
JESD-30 代码:S-PDSO-G8长度:3 mm
内存密度:8192 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:1024 words
字数代码:1000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
认证状态:Not Qualified座面最大高度:1.1 mm
串行总线类型:SPI最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
宽度:3 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

X25097M-2.7T5 数据手册

 浏览型号X25097M-2.7T5的Datasheet PDF文件第2页浏览型号X25097M-2.7T5的Datasheet PDF文件第3页浏览型号X25097M-2.7T5的Datasheet PDF文件第4页浏览型号X25097M-2.7T5的Datasheet PDF文件第5页浏览型号X25097M-2.7T5的Datasheet PDF文件第6页浏览型号X25097M-2.7T5的Datasheet PDF文件第7页 
Recommended System Management  
Alternative: X5083  
8K  
1024 x 8 Bit  
X25097  
5MHz Low Power SPI Serial EEPROM with IDLockMemory  
FEATURES  
DESCRIPTION  
• 5MHz clock rate  
• IDLock memory  
—IDLock first or last page, any 1/4 or lower 1/2 of  
EEPROM array  
• Low power CMOS  
—<1µA standby current  
—<3mA active current during write  
—<400µA active current during read  
• 2.7V-5.5V operation  
The X25097 is a CMOS 8K-bit serial EEPROM, inter-  
nally organized as 1024 x 8. The X25097 features a  
Serial Peripheral Interface (SPI) and software protocol,  
allowing operation on a simple four-wire bus. The bus  
signals are a clock input (SCK) plus separate data in  
(SI) and data out (SO) lines. Access to the device is  
controlled through a chip select (CS) input, allowing  
any number of devices to share the same bus.  
IDLock is a programmable locking mechanism which  
allows the user to lock system ID and parametric data  
in different portions of the EEPROM memory space,  
ranging from as little as one page to as much as 1/2 of  
the total array. The X25097 also features a WP pin that  
can be used for hardwire protection of the part, dis-  
abling all write attempts, as well as a Write Enable  
Latch that must be set before a write operation can be  
initiated.  
• Built-in inadvertent write protection  
Power-up/power-down protection circuitry  
—Write enable latch  
—Write protect pin  
• SPI modes (0,0 & 1,1)  
• 1024 x 8 bits  
—16-byte page mode  
• Self-timed write cycle  
—5ms write cycle time (typical)  
• High reliability  
—Endurance: 1,000,000 cycles/byte  
—Data retention: 100 years  
—ESD: 2000V on all pins  
• 8-lead MSOP package  
• 8-lead TSSOP package  
• 8-lead SOIC package  
The X25097 utilizes Xicor’s proprietary Direct Write™  
cell, providing a minimum endurance of 1,000,000  
cycles per byte and a minimum data retention of 100  
years.  
BLOCK DIAGRAM  
Data Register  
SI  
Y Decode Logic  
SO  
16  
8
Command  
Decode  
X
64  
SCK  
and  
Decode  
Logic  
Control  
Logic  
8K EERPM  
Array  
(1024 x 8)  
CS  
High Voltage  
Control  
Write Control Logic  
WP  
Characteristics subject to change without notice. 1 of 14  
REV 1.2 11/28/00  
www.xicor.com  

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