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X24C44ST4 PDF预览

X24C44ST4

更新时间: 2024-11-12 15:58:07
品牌 Logo 应用领域
XICOR 可编程只读存储器电动程控只读存储器电可擦编程只读存储器静态存储器光电二极管内存集成电路
页数 文件大小 规格书
15页 55K
描述
Non-Volatile SRAM, 16X16, 375ns, CMOS, PDSO8, PLASTIC, SOIC-8

X24C44ST4 技术参数

生命周期:Obsolete包装说明:PLASTIC, SOIC-8
Reach Compliance Code:unknown风险等级:5.82
最长访问时间:375 ns其他特性:EEPROM SOFTWARE STORE/ RECALL; RETENTION/ENDURANCE-100 YEARS/100000 CYCLES
JESD-30 代码:R-PDSO-G8长度:4.9 mm
内存密度:256 bit内存集成电路类型:NON-VOLATILE SRAM
内存宽度:16功能数量:1
端口数量:1端子数量:8
字数:16 words字数代码:16
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16X16
输出特性:3-STATE可输出:NO
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL认证状态:Not Qualified
座面最大高度:1.75 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:3.9 mmBase Number Matches:1

X24C44ST4 数据手册

 浏览型号X24C44ST4的Datasheet PDF文件第2页浏览型号X24C44ST4的Datasheet PDF文件第3页浏览型号X24C44ST4的Datasheet PDF文件第4页浏览型号X24C44ST4的Datasheet PDF文件第5页浏览型号X24C44ST4的Datasheet PDF文件第6页浏览型号X24C44ST4的Datasheet PDF文件第7页 
APPLICATION NOTES  
A V A I L A B L E  
AN3 • AN7 • AN8 • AN15 • AN16 • AN25 • AN29  
• AN30 • AN35 • AN36 • AN39 • AN56 • AN69  
256 Bit  
X24C44  
16 x 16 Bit  
Serial Nonvolatile Static RAM  
FEATURES  
DESCRIPTION  
Advanced CMOS Version of Xicor’s X2444  
16 x 16 Organization  
The Xicor X24C44 is a serial 256 bit NOVRAM featuring  
a static RAM configured 16 x 16, overlaid bit-by-bit with  
a nonvolatile E PROM array. The X24C44 is fabricated  
2
Single 5 Volt Supply  
Ideal for use with Single Chip Microcomputers  
withXicor’sAdvancedCMOSFloatingGatetechnology.  
—Static Timing  
TheXicorNOVRAMdesignallowsdatatobetransferred  
between the two memory arrays by means of software  
commands or external hardware inputs. A store opera-  
—Minimum I/O Interface  
—Serial Port Compatible (COPS™, 8051)  
—Easily Interfaced to Microcontroller Ports  
Software and Hardware Control of Nonvolatile  
Functions  
Auto Recall on Power-Up  
TTL and CMOS Compatible  
Low Power Dissipation  
2
tion (RAM data to E PROM) is completed in 5ms or less  
2
and a recall operation (E PROM data to RAM) is com-  
pleted in 2µs or less.  
XicorNOVRAMsaredesignedforunlimitedwriteopera-  
tions to RAM, either from the host or recalls from  
—Active Current: 10mA Maximum  
—Standby Current: 50µA Maximum  
8-Lead PDIP, Cerdip, and 8-Lead SOIC Packages  
High Reliability  
2
E PROM and a minimum 1,000,000 store operations.  
Inherent data retention is specified to be greater than  
100 years.  
—Store Cycles: 1,000,000  
—Data Retention: 100 Years  
FUNCTIONAL DIAGRAM  
NONVOLATILE  
2
E PROM  
ORE  
ST  
STATIC  
RAM  
256-BIT  
RECALL (6)  
STORE (7)  
CONTROL  
LOGIC  
RECALL  
ROW  
DECODE  
CE (1)  
INSTRUCTION  
DI (3)  
COLUMN  
DECODE  
DO (4)  
REGISTER  
SK (2)  
INSTRUCTION  
DECODE  
4-BIT  
COUNTER  
3832 FHD F01  
COPS is a trademark of National Semiconductor Corp.  
© Xicor, Inc. 1991, 1995, 1996 Patents Pending  
3832-1.5 2/24/99 T2/C1/D1 NS  
Characteristics subject to change without notice  
1

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