Datasheet > X0202NA5BA4

X0202NA5BA4

更新时间： 2024-10-29 22:12:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可控硅
页数	文件大小	规格书
6页	150K
描述
1.25A SCRs

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中文翻译

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数据手册

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X0202NA5BA4 数据手册

X02 Series

SENSITIVE

1.25A SCRs

MAIN FEATURES:

Symbol

Value

1.25

Unit

T(RMS)

600 and 800

50 to 200

DRM RRM

µA

DESCRIPTION

Thanks to highly sensitive triggering levels, the

X02 SCR series is suitable for all applications

where the available gate current is limited, such as

ground fault circuit interruptors, overvoltage

crowbar protection in low power supplies,

capacitive ignition circuits, ...

TO-92

(X02xxA)

SOT-223

(X02xxN)

Available in though-hole or surface-mount

packages, these devices are optimized in forward

voltage drop and inrush current capabilities, for

reduced power losses and high reliability in harsh

environments.

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Value

Unit

RMS on-state current

(180° conduction angle)

TO-92

SOT-223

TO-92

TI = 55°C

T(RMS)

1.25

0.8

Ttab = 95°C

TI = 55°C

Average on-state current

(180° conduction angle)

(AV)

SOT-223

tp = 8.3 ms

tp = 10 ms

Ttab = 95°C

Non repetitive surge peak on-state

current

TSM

Tj = 25°C

22.5

tp = 10 ms

F = 60 Hz

tp = 20 µs

Tj = 25°C

2.5

A S

I t

I t Value for fusing

Critical rate of rise of on-state current

dI/dt

Tj = 125°C

A/µs

= 2 x I , tr ≤ 100 ns

Peak gate current

Tj = 125°C

1.2

0.2

Average gate power dissipation

G(AV)

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

stg

°C

September 2000 - Ed: 3

1/6

12 3 4 5 6

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