5秒后页面跳转
WW12KR007FTLJ PDF预览

WW12KR007FTLJ

更新时间: 2024-10-29 17:00:11
品牌 Logo 应用领域
华新科技 - WALSIN /
页数 文件大小 规格书
7页 1019K
描述
Metal Plate Low Ohm Current Sense Chip-Resistor (Automotive) 1206(3216), 0.007Ω, ±1%, 1W

WW12KR007FTLJ 数据手册

 浏览型号WW12KR007FTLJ的Datasheet PDF文件第1页浏览型号WW12KR007FTLJ的Datasheet PDF文件第2页浏览型号WW12KR007FTLJ的Datasheet PDF文件第3页浏览型号WW12KR007FTLJ的Datasheet PDF文件第4页浏览型号WW12KR007FTLJ的Datasheet PDF文件第5页浏览型号WW12KR007FTLJ的Datasheet PDF文件第7页 
Approval sheet  
REQUIREMENT  
TEST AND REQUIREMENTS ( AEC Q200 )  
TEST  
PROCEDURE  
Temperature Coefficient of Natural resistance change per change in degree centigrade.  
Refer to  
Resistance(T.C.R)  
“QUICK REFERENCE DATA”  
R2 R  
106  
1
(ppm/C) t1 : 20°C+5°C-1°C  
Clause 4.8  
R1t2 t1  
R1 : Resistance at reference temperature  
R2 : Resistance at test temperature  
High Temperature  
Exposure (Storage)  
Test 1000 hrs./ @T=170/ Un-powered.  
Measurement at 24±2 hours after test conclusion.  
R/R max. ±(1%+0.5mΩ)  
no visible damage  
MIL-STD-202 Method 108  
Temperature cycling  
no visible damage  
Test 1000 cycles (-55to +125).  
JESD22 Method JA-104  
R/R max. ±(0.5%+1m)  
no visible damage  
Measurement at 24±2 hours after test conclusion  
Test 65/ 80~100%RH/ 10Cycles(t=24hrs/cycle).  
Measurement at 24±2 hours after test conclusion.  
Test 1000 hours/ @85/85% RH./ 10% of operation power.  
Measurement at 24±2 hours after test conclusion.  
Test 1000 hrs./ TA=125/ 35% of operating power.  
Measurement at 24±2 hours after test conclusion  
Inspect device construction, marking and workmanship  
Moisture Resistance  
MIL-STD-202 Method 106  
R/R max. ±(0.5%+0.5m)  
no visible damage  
Bias Humidity  
MIL-STD-202 Method 103  
R/R max. ±(1%+0.5m)  
no visible damage  
Operation life  
MIL-STD-202 Method 108  
R/R max. ±(1%+0.5m)  
no visible damage  
External Visual  
MIL-STD-883 Method  
2009  
Physical Dimensions  
JESD22 Method JB-100  
Mechanical Shock  
The chip dimension (L, W, T, D) prescribed in the detail specification  
shall be checked by Protech 2.5D.  
Within the specified tolerance  
Test Peak value:100g's / Wave:Hail-sine / Duration:6ms /  
Velocity:12.3ft/sec.  
Within product specification  
tolerance and no visible  
damage  
MIL-STD-202 Method 213  
Vibration  
Test 5g’s for 20min., 12 cycles each of 3 orientations.  
no visible damage  
MIL-STD-202 Method 204  
R/R max. ±(0.5%+0.5m)  
no visible damage  
Resistance to soldering  
heat (R.S.H)  
Solder dipping @ 270±5for 10sec.±1sec.  
R/R max. ±(0.5%+0.5m)  
MIL-STD-202 Method 210  
Thermal Shock  
no visible damage  
Test –55 to 155/ dwell time 15min/ Max transfer time 20sec/  
300cycles.  
MIL-STD-202 Method 107  
R/R max. ±(0.5%+0.5m)  
no visible damage  
ESD  
Test contact 1KV (Min)  
AEC-Q200-002  
R/R max. ±(1%+0.5m)  
good tinning (>95% covered)  
no visible damage  
Solderability  
J-STD-002  
a) Bake the sample for 155dwell time 4hrs/ solder dipping 235/  
5sec.  
b) Steam the sample dwell time 8 hour/ solder dipping 215/ 5sec.  
c) Steam the sample dwell time 8 hour/ solder dipping 260/ 7sec.  
Bending 2mm  
Board Flex  
no visible damage  
AEC-Q200-005  
R/R max. ±(0.5%+1m)  
Terminal Strength  
AEC-Q200-006  
Force: 1.8kg for 60sec.  
No cracking or no part being  
sheared off from its pad.  
Short time overload  
(S.T.O.L) Clause 4.13  
5×Rated power for 5 seconds.  
no visible damage  
R/R max.±1%  
R/R max.±1%  
Anti-Sulfur  
EIA-977(Test B)  
Sulfur 750 hours, 105±2°C  
Page 6 of 7  
ASC_WW12K_J_AUTO_V04  
Sep - 2023  

与WW12KR007FTLJ相关器件

型号 品牌 获取价格 描述 数据表
WW12KR007JTL WALSIN

获取价格

1206(3216), 0.007Ω, ±5%, 1W
WW12KR007JTLJ WALSIN

获取价格

Metal Plate Low Ohm Current Sense Chip-Resist
WW12KR008FTL WALSIN

获取价格

1206(3216), 0.008Ω, ±1%, 1W
WW12KR008FTLJ WALSIN

获取价格

Metal Plate Low Ohm Current Sense Chip-Resist
WW12KR008JTL WALSIN

获取价格

1206(3216), 0.008Ω, ±5%, 1W
WW12KR008JTLJ WALSIN

获取价格

Metal Plate Low Ohm Current Sense Chip-Resist
WW12KR009FTL WALSIN

获取价格

1206(3216), 0.009Ω, ±1%, 1W
WW12KR009FTLJ WALSIN

获取价格

Metal Plate Low Ohm Current Sense Chip-Resist
WW12KR009JTL WALSIN

获取价格

1206(3216), 0.009Ω, ±5%, 1W
WW12KR009JTLJ WALSIN

获取价格

Metal Plate Low Ohm Current Sense Chip-Resist