WSV20L60DW,WSAT20L60DW,WSCT20L60DW,WSR20L60DW-HAF
Silicon Epitaxial Planar Barrier Schottky Rectifiers
Reverse Voltage - 60 V
Forward Current - 20 A
WSAT20L60DW
WSV20L60DW
Features
• Low forward voltage drop, low power losses
• High efficiency operation
2
1
3
• Halogen and Antimony Free(HAF), RoHS compliant
1.Anode 2.Cathode 3.Anode
1.Anode 2.Cathode 3.Anode
TO-263 Plastic Package
TO-220F Plastic Package
Applications
WSR20L60DW
WSCT20L60DW
• For use in high frequency converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode
• DC/DC converters and reverse battery protection.
1.Anode 2.Cathode 3.Anode
1.Anode 2.Cathode 3.Anode
TO-252 Plastic Package
TO-220FB Plastic Package
Absolute Maximum Ratings (Ta = 25℃ unless otherwise specified)
Parameter
Symbol
VRRM
Value
Unit
V
Maximum Repetitive Peak Reverse Voltage
60
per device
per diode
20
10
IF(AV)
Average Rectified Forward Current
A
A
Peak Forward Surge Current 8.3 ms Single half sine-
wave Superimposed on Rated Load (JEDEC Method)
IFSM
100
Non-Repetitive Avalanche Energy, L = 60 mH
Operating Junction Storage Temperature Range
EAS
65
mJ
℃
Tj, Tstg
- 55 to + 150
Thermal Characteristics (at Ta = 25℃ unless otherwise specified)
WSV20 WSAT20 WSCT20 WSR20
L60DW L60DW L60DW L60DW
Parameter
Symbol
RθJC
Unit
2.4
4
2.4
6
Typical Thermal Resistance-Junction to Case
℃/W
Electrical Characteristics (at Ta = 25℃ unless otherwise specified)
Parameter
Symbol
Min.
Typ.
-
Max.
Unit
V
Forward Voltage
at IBR = 150 µA
VBR
60
-
Forward Voltage
at IF = 5 A, Ta = 25°Ϲ
at IF = 5 A, Ta = 125°Ϲ
at IF = 10 A, Ta = 25°Ϲ
at IF = 10 A, Ta = 125°Ϲ
-
-
-
-
-
0.5
-
0.55
VF
-
0.68
-
V
0.65
DC Reverse Current
at VR = 60 V, Ta = 25°Ϲ
at VR = 60 V, Ta = 125°Ϲ
IR
-
-
-
-
150
25
µA
mA
®
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Dated: 18/09/2020 Rev :01