Datasheet > WPM3012-3TR

WPM3012-3TR

更新时间： 2022-04-20 00:12:41

品牌	Logo	应用领域
TYSEMI		电池
页数	文件大小	规格书
3页	173K
描述
Single P-Channel, -30V, -3.1A, Power MOSFET Supper high density cell design

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WPM3012-3TR 数据手册

Product specification

WPM3012

Electronics Characteristics (Ta=25^oC, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-to-source Leakage Current

ON CHARACTERISTICS

Gate Threshold Voltage

BV_DSS

I_DSS

I_GSS

V_GS= 0 V, I_D= -250uA

V_DS= -24V, V_GS= 0V

V_DS= 0 V, V_GS= 20V

-30

-1

ꢁ

100

V_GS(TH)

R_DS(on)

V_GS= V_DS, I_D= -250uA

V_GS= -10V, I_D= -3.1A

V_GS= -4.5V, I_D= -2.8A

-1.5

-1.9

-2.5

Drain-to-source On-resistance ^{b, c}

Forward Transconductance

g_FS

V_DS= -5 V, I_D=-5.0A

8.2

CAPACITANCES, CHARGES

Input Capacitance

C_ISS

654

V_GS= 0 V,

f = 1.0 MHz,

Output Capacitance

C_OSS

C_RSS

Q_G(TOT)

Q_G(TH)

Q_GS

V_DS= -20V

Reverse Transfer Capacitance

Total Gate Charge

1.55 ꢁ

2.03 ꢁ

3.15 ꢁ

12.9 ꢁ

V_GS= -10 V,

_DS= -15V,

Threshold Gate Charge

Gate-to-Source Charge

Gate-to-Drain Charge

SWITCHING CHARACTERISTICS

Turn-On Delay Time

I_D= -3.1A

Q_GD

td(ON)

9.6

4.0

V_GS= -10 V,

Rise Time

V_DS= -15 V,

R_L=5,

Turn-Off Delay Time

td(OFF)

34.8

7.2

R_G=15

Fall Time

BODY DIODE CHARACTERISTICS

Forward Voltage

V_SD

V_GS= 0 V, I_S= -1.0A

-0.8

-1.5

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