Datasheet > WPM3401-3

WPM3401-3

更新时间： 2022-03-23 20:02:28

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	1071K
描述
P-Channel Enhancement Mode MOSFET Power Management in Note book

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WPM3401-3 数据手册

Product specification

WPM3401

P-Channel Enhancement Mode MOSFET

Description

The WPM3401 is the P-Channel logic enhancement mode

power field effect transistors are produced using high cell

density, DMOS trench technology.

This high density process is especially tailored to minimize

on-state resistance. These devices are particularly suited for low

voltage application, notebook computer power management and

other battery powered circuits where high-side switching.

P−Channel MOSFET

Features

-30V/-4.3A,RDS(ON) 53m@VGS= -10V

-30V/-3.4A,RDS(ON)<56m@VGS=-4.5V

Super high density cell design for extremely low RDS (ON)

Exceptional on-resistance and maximum DC current

capability

package design

SOT23-3

Top View

Application

Power Management in Note book

Drain

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

WP1U

Gate Source

= Date Code

= Specific Device Code

WP1

Order information

Part Number

Shipping

3000 Tape&Reel

Package

SOT23-3

WPM3401-3/TR

http://www.twtysemi.com

sales@twtysemi.com

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