Datasheet > WPM3012

WPM3012

更新时间： 2022-04-20 00:12:41

品牌	Logo	应用领域
TYSEMI		电池
页数	文件大小	规格书
3页	173K
描述
Single P-Channel, -30V, -3.1A, Power MOSFET Supper high density cell design

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WPM3012 数据手册

Product specification

WPM3012

Absolute Maximum ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

10 S

Steady State

-30

Unit

Gate-Source Voltage

V_GS

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

-3.1

-2.5

0.9

-2.9

-2.3

0.8

Continuous Drain Current ^a

Maximum Power Dissipation ^a

Continuous Drain Current ^b

Maximum Power Dissipation ^b

I_D

P_D

I_D

0.6

0.5

-2.8

-2.2

0.7

-2.6

-2.1

0.6

P_D

0.5

0.4

Pulsed Drain Current ^c

I_DM

T_J

-15

150

Operating Junction Temperature

Lead Temperature

°C

T_L

260

-55 to 150

Storage Temperature Range

T_stg

Thermal resistance ratings

Parameter

Symbol

Typical

105

Maximum

130

Unit

t 10 s

Junction-to-Ambient Thermal Resistance ^a

R_șJA

120

155

Steady State

t 10 s

130

160

°C/W

Junction-to-Ambient Thermal Resistance ^b

Junction-to-Case Thermal Resistance

R_șJA

R_șJC

145

190

Steady State

Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper

Surface mounted on FR-4 board using minimum pad size, 1oz copper

Pulse width<380μs, Duty Cycle<2%

Maximum junction temperature T_J=150°C.

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sales@twtysemi.com

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