Datasheet > WPM3005-3TR

WPM3005-3TR

更新时间： 2022-03-23 10:34:42

品牌	Logo	应用领域
TYSEMI		电池
页数	文件大小	规格书
3页	964K
描述
Single P-Channel, -30V, -4.1A, Power MOSFET Supper high density cell design

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WPM3005-3TR 数据手册

Product specification

WPM3005

Absolute Maximum ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

10 S

Steady State

Unit

-30

±20

Gate-Source Voltage

V_GS

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

-4.1

-3.3

1.4

-3.4

-2.7

1.0

Continuous Drain Current ^a

Maximum Power Dissipation ^a

Continuous Drain Current ^b

Maximum Power Dissipation ^b

I_D

P_D

I_D

0.9

0.6

-3.8

-3.0

1.2

-3.2

-2.5

0.8

P_D

0.8

0.5

Pulsed Drain Current ^c

I_DM

T_J

-25

150

Operating Junction Temperature

Lead Temperature

°C

260

T_L

-55 to 150

Storage Temperature Range

T_stg

Thermal resistance ratings

Parameter

Symbol

Typical

Maximum

Unit

125

100

140

t 10 s

Junction-to-Ambient Thermal Resistance ^a

R_șJA

Steady State

t 10 s

°C/W

Junction-to-Ambient Thermal Resistance ^b

Junction-to-Case Thermal Resistance

R_șJA

R_șJC

115

Steady State

Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper

Surface mounted on FR4 board using minimum pad size, 1oz copper

Repetitive rating, pulse width limited by junction temperature, t_p=10μs, Duty Cycle=1%

Repetitive rating, pulse width limited by junction temperature T_J=150°C.

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