Datasheet > WPM3005-3

WPM3005-3

更新时间： 2022-03-23 10:34:42

品牌	Logo	应用领域
TYSEMI		电池
页数	文件大小	规格书
3页	964K
描述
Single P-Channel, -30V, -4.1A, Power MOSFET Supper high density cell design

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WPM3005-3 数据手册

Product specification

WPM3005

Electronics Characteristics (Ta=25^oC, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-to-source Leakage Current

ON CHARACTERISTICS

Gate Threshold Voltage

BV_DSS

I_DSS

I_GSS

V_GS= 0 V, I_D= -250uA

-30

V_DS= -24 V, V

_GS= 0V

-1

V_DS= 0 V, V_GS= 20V

100

V_GS(TH)

R_DS(on)

g_FS

V_GS= V_DS, I_D= -250uA

V_GS= -10V, I_D= -4.1A

V_GS= -10V, I_D= -3.0A

V_GS= -4.5V, I_D= -4.0A

V_GS= -4.5V, I_D= -3.0A

V_DS= -5 V, I_D= -4.1A

-1.5

-2.0

-2.5

Drain-to-source On-resistance

Forward Transconductance

7.6

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

C_ISS

670

_GS= 0 V, f = 1.0 MHz, V_DS=

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

C_OSS

C_RSS

Q_G(TOT)

Q_G(TH)

Q_GS

-15 V

14.0

1.31

2.0

Threshold Gate Charge

Gate-to-Source Charge

Gate-to-Drain Charge

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Rise Time

V_GS= -10 V, V_DS= -15 V,

I_D= -4.1 A

Q_GD

2.45

td(ON)

6.8

3.2

V_GS= -10 V, V_DS= -15V,

R_L=5.0 , R_G=15

Turn-Off Delay Time

Fall Time

td(OFF)

25.2

4.4

BODY DIODE CHARACTERISTICS

Forward Voltage

= -1.0A

V_GS= 0 V, I_S

-0.55

-0.78

-1.50

V_SD

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