Datasheet > WNS40100C

WNS40100C

更新时间： 2022-02-26 14:17:03

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描述
Dual power Schottky diode

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中文翻译

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WNS40100C 数据手册

WeEn Semiconductors

WNS40100C

Dual power Schottky diode

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

V_RRM

repetitive peak reverse

voltage

100

V_RWM

limiting crest working

reverse voltage

100

V_R

limiting reverse voltage

100

I_F(AV)

average forward current δ = 0.5 ; T_mb≤ 128 °C; square-wave

pulse; per diode; Fig. 1; Fig. 2; Fig. 3

I_O(AV)

I_FSM

average output current

δ = 0.5 ; T_mb≤ 126 °C; square-wave

pulse; both diodes conducting

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave

pulse; per diode; Fig. 4

330

363

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave

pulse; per diode

T_stg

T_j

storage temperature

junction temperature

-40

150

°C

aaf550-002

aaf550-001

tot

(W)

tot

δ = 1

(W)

a = 1.57

1.9

0.5

2.2

2.8

0.2

4.0

0.1

F(AV)

(A)

I_F(AV)= I_F(RMS)× √δ

V_o= 0.562 V; R_s= 0.0070 Ω

a = form factor = I _F(RMS)/ I_F(AV)

V_o= 0.562 V; R_s= 0.0070 Ω

Fig. 1. Forward power dissipation as a function of

average forward current; square waveform; maximum

values; per diode

Fig. 2. Forward power dissipation as a function

of average forward current; sinusoidal waveform;

maximum values; per diode

WNS40100C

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Product data sheet

26 April 2019

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