Datasheet > WN3S30H150CXT

WN3S30H150CXT

更新时间： 2024-04-09 18:58:55

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
11页	451K
描述
Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in TO220F plastic package

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WN3S30H150CXT 数据手册

WeEn Semiconductors

WN3S30H150CXT

Dual power Schottky diode

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Notes

Min

Typ

Max

Unit

R_th(j-h)

thermal resistance

from junction to

heatsink

with heatsink compound; per diode;

Fig. 5

5.2

K/W

with heatsink compound; both diodes

conducting

K/W

R_th(j-a)

thermal resistance

from junction to

ambient free air

in free air

δ =

Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse duration; maximum values;

per diode

10. Isolation characteristics

Table 7. Isolation characteristics

Symbol

Parameter

Conditions

Notes

Min

Typ

Max

Unit

V_isol(RMS)

RMS isolation voltage

from all terminals to external heatsink;

sinusoidal waveform; clean and dust

free; 50 Hz ≤ f ≤ 60 Hz; T_h= 25 °C;

RH ≤ 65 %

2500

WN3S30H150CXT

All information provided in this document is subject to legal disclaimers.

15 November 2023

Product data sheet

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