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WN3S30H170CBT PDF预览

WN3S30H170CBT

更新时间: 2024-04-09 19:00:38
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瑞能 - WEEN /
页数 文件大小 规格书
11页 473K
描述
Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a TO263 (D2PAK) plastic package.

WN3S30H170CBT 数据手册

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WN3S30H170CBT  
Dual power Schottky diode  
Rev.01 - 31 October 2022  
Product data sheet  
1. General description  
Dual common cathode power Schottky diode  
designed for high frequency switched mode  
power supplies in a TO263 (D2PAK) plastic  
package.  
alogen-Free  
RoHS  
h
2. Features and benefits  
High junction temperature up to 175 °C  
Low forward voltage drop, negligible switching losses  
High efficiency  
3. Applications  
DC to DC converters  
Freewheeling diode  
OR-ing diode  
Switched mode power supply rectifier  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Notes  
Values  
Unit  
Absolute maximum rating  
VRRM  
IF(AV)  
IO(AV)  
repetitive peak reverse  
voltage  
170  
15  
V
average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 158 °C;  
per diode; Fig. 1; Fig. 2; Fig. 3  
A
average output current  
δ = 0.5 ; square-wave pulse; Tmb ≤ 158 °C;  
30  
A
both diodes conducting  
Symbol Parameter  
Static characteristics  
Conditions  
Notes Min  
Typ  
Max  
Unit  
VF  
IR  
forward voltage  
reverse current  
IF = 15 A; Tj = 25 °C; per diode; Fig. 6  
-
-
0.81  
0.90  
10  
V
VR = 170 V; Tj = 25 °C; per diode;  
Fig. 7; Fig. 8  
0.2  
μA  

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