Datasheet > WN3S40H100C

WN3S40H100C

更新时间： 2024-11-09 17:01:03

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
11页	436K
描述
Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a TO220 plastic package.

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WN3S40H100C 数据手册

WN3S40H100C

Dual power Schottky diode

Rev.01 - 14 December 2021

Product data sheet

1. General description

Dual common cathode power Schottky diode

designed for high frequency switched mode

power supplies in a TO220 plastic package.

alogen-Free

RoHS

2. Features and beneﬁts

•

Trench structure

•

High junction temperature up to 150°C

High eﬃciency

Low forward voltage drop, negligible switching losses

3. Applications

•

DC to DC converters

Freewheeling diode

OR-ing diode

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_RRM

I_F(AV)

I_O(AV)

repetitive peak reverse

voltage

100

average forward

current

δ = 0.5 ; square-wave pulse; T_mb≤ 134 °C;

per diode; Fig. 1; Fig. 2; Fig. 3

average output current δ = 0.5 ; square-wave pulse; T_mb≤ 131 °C;

both diodes conducting

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

V_F

forward voltage

I_F= 10 A; T_j= 25 °C; prediode; Fig. 6

I_F= 10 A; T_j= 125 °C; prediode; Fig. 6

I_F= 20 A; T_j= 25 °C; prediode; Fig. 6

I_F= 20 A; T_j= 125 °C; prediode; Fig. 6

V_R= 100 V; T_j= 25 °C; Fig. 7

0.54

0.5

0.67

0.63

0.59

0.56

0.71

0.68

I_R

reverse current

μA

V_R= 100 V; T_j= 125 °C; Fig. 7

12 3 4 5 6 7...11

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