Datasheet > WN3S30H45CB

WN3S30H45CB

更新时间： 2024-11-09 17:01:19

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
11页	431K
描述
Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a TO263 plastic package.

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WN3S30H45CB 数据手册

WN3S30H45CB

Dual power Schottky diode

Rev.01 - 27 March 2023

Product data sheet

1. General description

Dual common cathode power Schottky diode

designed for high frequency switched mode

power supplies in a TO263 (D2PAK) package.

alogen-Free

RoHS

2. Features and beneﬁts

•

Trench structure

High junction temperature up to 150 °C

Low forward voltage drop, negligible switching losses

•

High eﬃciency

3. Applications

•

DC to DC converters

Freewheeling diode

OR-ing diode

Switched mode power supply rectiﬁer

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Notes

Values

Unit

Absolute maximum rating

V_RRM

I_F(AV)

I_O(AV)

repetitive peak reverse

voltage

average forward current δ = 0.5 ; square-wave pulse; T_mb≤ 130 °C;

per diode; Fig. 1; Fig. 2; Fig. 3

average output current

δ = 0.5 ; square-wave pulse; T_mb≤ 132 °C;

both diodes conducting

Symbol Parameter

Static characteristics

Conditions

Notes Min

Typ

Max

Unit

V_F

I_R

forward voltage

reverse current

I_F= 15 A; T_j= 25 °C; per diode; Fig. 6

V_R= 45 V; T_j= 25 °C; per diode; Fig. 7

0.50

0.60

100

μA

12 3 4 5 6 7...11

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