Datasheet > WN3S30H150CXT

WN3S30H150CXT

更新时间： 2024-04-09 18:58:55

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描述
Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in TO220F plastic package

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WN3S30H150CXT 数据手册

WeEn Semiconductors

WN3S30H150CXT

Dual power Schottky diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Notes

Values

Unit

V_RRMrepetitive peak reverse

150

voltage

V_RWM

crest working reverse

voltage

150

V_R

reverse voltage

150

I_F(AV)

average forward current δ = 0.5 ; square-wave pulse; per diode;

Fig. 1; Fig. 2; Fig. 3

I_O(AV)

I_FSM

average output current

δ = 0.5 ; square-wave pulse; both diodes

conducting

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse;

per diode; Fig. 4

300

330

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave pulse;

per diode

storage temperature

junction temperature

-40 to 175

°C

stg

T_j

[1]

[1] The heat generated must be less than the thermal conductivity from Junction to Ambient: dP_tot/dT_j< 1/R_th(j-a)

I_F(AV)= I_F(RMS)× √δ

V_o= 0.671 V; R_s= 0.0061 Ω

a = form factor = I_F(RMS)/ I_F(AV)

V_o= 0.671 V; R_s= 0.0061 Ω

Fig. 1. Forward power dissipation as a function of

average forward current; square waveform;

maximum values; per diode

Fig. 2. Forward power dissipation as a function of

average forward current; sinusoidal waveform;

maximum values; per diode

WN3S30H150CXT

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15 November 2023

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