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WMS512K8-55DEIA PDF预览

WMS512K8-55DEIA

更新时间: 2024-11-01 19:20:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 静态存储器内存集成电路
页数 文件大小 规格书
11页 1056K
描述
Standard SRAM, 512KX8, 55ns, CMOS, CDSO32, CREAMIC, SOJ-32

WMS512K8-55DEIA 技术参数

是否Rohs认证:不符合生命周期:Transferred
零件包装代码:SOJ包装说明:SOJ, SOJ32,.44
针数:32Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.04Is Samacsys:N
最长访问时间:55 nsI/O 类型:COMMON
JESD-30 代码:R-CDSO-J32长度:21.1 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端口数量:1端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX8
输出特性:3-STATE可输出:YES
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:SOJ
封装等效代码:SOJ32,.44封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
反向引出线:NO座面最大高度:3.96 mm
最大待机电流:0.002 A最小待机电流:2 V
最大压摆率:0.16 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:11.23 mm
Base Number Matches:1

WMS512K8-55DEIA 数据手册

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WMS512K8-XXX  
512Kx8 MONOLITHIC SRAM, SMD 5962-95613  
FEATURES  
 Access Times 15, 17, 20, 25, 35, 45, 55ns  
• 32 pin, Rectangular Ceramic Leadless Chip Carrier  
(Package 601)  
 MIL-STD-883 Compliant Devices Available  
• Commercial, Industrial and Military Temperature Range  
• 5V Power Supply  
 Revolutionary, Center Power/Ground Pinout JEDEC  
Approved  
• 36 lead Ceramic SOJ (Package 100)  
• Low Power CMOS  
• 36 lead Ceramic Flat Pack (Package 226)  
• Low Power Data Retention for Battery Back-up Operation  
• TTL Compatible Inputs and Outputs  
 Evolutionary, Corner Power/Ground Pinout JEDEC  
Approved  
• 32 pin Ceramic DIP (Package 300)  
*This product is subject to change without notice.  
• 32 lead Ceramic SOJ (Package 101)  
• 32 lead Ceramic Thinpack™ Flat Pack (Package 321)  
REVOLUTIONARY PINOUT  
EVOLUTIONARY PINOUT  
32 DIP  
36 FLAT PACK  
36 CSOJ  
32 CSOJ (DE)  
32 CLCC  
32 FLAT PACK (FF)  
TOP VIEW  
TOP VIEW  
TOP VIEW  
A0  
A1  
A2  
A3  
A4  
CS#  
I/O0  
I/O1  
VCC  
VSS  
I/O2  
I/O3  
WE#  
A5  
1
2
3
4
5
6
7
8
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
NC  
32 VCC  
A18  
A16  
A14  
A12  
A7  
1
31 A15  
30 A17  
29 WE#  
28 A13  
27 A8  
A18  
A17  
A16  
A15  
OE#  
I/O7  
I/O6  
VSS  
VCC  
I/O5  
I/O4  
A14  
A13  
A12  
A11  
A10  
NC  
2
4
3 2 1 32 31 30  
3
5
6
7
8
29  
28  
27  
26  
25  
24  
23  
22  
21  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
I/O0  
WE#  
A13  
A8  
4
5
A6  
6
26 A9  
7
A5  
A9  
25 A11  
24 OE#  
23 A10  
22 CS#  
21 I/O7  
20 I/O6  
19 I/O5  
18 I/O4  
17 I/O3  
8
A4  
9
A11  
OE#  
A10  
CS#  
I/O7  
9
A3  
10  
11  
12  
13  
9
10  
11  
12  
13  
14  
15  
16  
A2  
10  
11  
12  
13  
14  
15  
16  
17  
18  
A1  
A0  
I/O0  
I/O1  
I/O2  
VSS  
14 15 16 17 18 19 20  
A6  
A7  
A8  
A9  
PIN DESCRIPTION  
A0-18  
I/O 0-7  
CS#  
Address Inputs  
Data Input/Output  
Chip Select  
OE#  
Output Enable  
Write Enable  
+5.0V Power  
Ground  
WE#  
VCC  
GND  
Microsemi Corporation reserves the right to change products or specications without notice.  
April 2012 © 2012 Microsemi Corporation. All rights reserved.  
Rev. 13  
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp  
www.whiteedc.com  

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