5秒后页面跳转
WMS128K8V-17DRM PDF预览

WMS128K8V-17DRM

更新时间: 2024-11-01 08:08:55
品牌 Logo 应用领域
其他 - ETC 内存集成电路静态存储器
页数 文件大小 规格书
8页 184K
描述
128Kx8 3.3V MONOLITHIC SRAM

WMS128K8V-17DRM 数据手册

 浏览型号WMS128K8V-17DRM的Datasheet PDF文件第2页浏览型号WMS128K8V-17DRM的Datasheet PDF文件第3页浏览型号WMS128K8V-17DRM的Datasheet PDF文件第4页浏览型号WMS128K8V-17DRM的Datasheet PDF文件第5页浏览型号WMS128K8V-17DRM的Datasheet PDF文件第6页浏览型号WMS128K8V-17DRM的Datasheet PDF文件第7页 
WMS128K8V-XXX  
ABSOLUTE MAXIMUM RATINGS  
TRUTH TABLE  
Parameter  
Symbol  
TA  
Min  
-55  
-65  
-0.5  
Max  
+125  
+150  
Vcc+0.5  
150  
Unit  
°C  
°C  
V
CS  
H
L
L
L
OE  
X
L
X
H
WE  
X
H
L
H
Mode  
Standby  
Read  
Write  
Out Disable  
Data I/O  
High Z  
Data Out  
Data In  
High Z  
Power  
Standby  
Active  
Active  
Active  
Operating Temperature  
Storage Temperature  
Signal Voltage Relative to GND  
Junction Temperature  
Supply Voltage  
TSTG  
VG  
TJ  
°C  
V
VCC  
-0.5  
5.5  
CAPACITANCE  
(TA = +25°C)  
RECOMMENDED OPERATING CONDITIONS  
Parameter  
Symbol  
VCC  
Min  
3.0  
Max  
3.6  
Unit  
V
Parameter  
Symbol  
CIN  
Condition  
IN = 0V, f = 1.0MHz  
VOUT = 0V, f = 1.0MHz  
Max Unit  
Supply Voltage  
Input capacitance  
Output capacitance  
V
20  
20  
pF  
pF  
Input High Voltage  
Input Low Voltage  
Operating Temp. (Mil.)  
VIH  
2.2  
VCC + 0.3  
+0.8  
V
COUT  
VIL  
-0.3  
-55  
V
This parameter is guaranteed by design but not tested.  
TA  
+125  
°C  
DC CHARACTERISTICS  
(VCC = 3.3V ±0.3V, VSS = 0V, TA = -55°C to +125°C)  
Parameter  
Sym  
Conditions  
Units  
Min  
Max  
Input Leakage Current  
Output Leakage Current  
ILI  
ILO  
VCC = 3.3, VIN = GND to VCC  
CS = VIH, OE = VIH, VOUT = GND to VCC  
CS = VIL, OE = VIH, f = 5MHz, VCC = 3.3  
CS = VIH, OE = VIH, f = 5MHz, VCC = 3.3  
IOL = 8mA  
10  
µA  
µA  
mA  
mA  
V
10  
120  
8
Operating Supply Current (x 32 Mode)  
Standby Current  
ICC  
ISB  
Output Low Voltage  
VOL  
VOH  
0.4  
Output High Voltage  
IOH = -4.0mA  
2.4  
V
AC TEST CIRCUIT  
AC TEST CONDITIONS  
IOL  
Parameter  
Input Pulse Levels  
Typ  
Unit  
V
Current Source  
VIL = 0, VIH = 2.5  
Input Rise and Fall  
5
ns  
V
Input and Output Reference Level  
Output Timing Reference Level  
1.5  
1.5  
D.U.T.  
VZ 1.5V  
V
(Bipolar Supply)  
Ceff = 50 pf  
NOTES:  
VZ is programmable from -2V to +7V.  
IOL & IOH programmable from 0 to 16mA.  
Tester Impedance Z0 = 75 .  
VZ is typically the midpoint of VOH and VOL.  
IOL & IOH are adjusted to simulate a typical resistive load circuit.  
ATE tester includes jig capacitance.  
IOH  
Current Source  
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520  
2

与WMS128K8V-17DRM相关器件

型号 品牌 获取价格 描述 数据表
WMS128K8V-17DRMA ETC

获取价格

128Kx8 3.3V MONOLITHIC SRAM
WMS128K8V-17FRC ETC

获取价格

128Kx8 3.3V MONOLITHIC SRAM
WMS128K8V-17FRCA ETC

获取价格

128Kx8 3.3V MONOLITHIC SRAM
WMS128K8V-17FRI ETC

获取价格

128Kx8 3.3V MONOLITHIC SRAM
WMS128K8V-17FRIA ETC

获取价格

128Kx8 3.3V MONOLITHIC SRAM
WMS128K8V-17FRM ETC

获取价格

128Kx8 3.3V MONOLITHIC SRAM
WMS128K8V-17FRMA ETC

获取价格

128Kx8 3.3V MONOLITHIC SRAM
WMS128K8V-20CC ETC

获取价格

128Kx8 3.3V MONOLITHIC SRAM
WMS128K8V-20CCA ETC

获取价格

128Kx8 3.3V MONOLITHIC SRAM
WMS128K8V-20CI ETC

获取价格

128Kx8 3.3V MONOLITHIC SRAM