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WG6006R12 PDF预览

WG6006R12

更新时间: 2024-11-25 20:03:19
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
3页 168K
描述
Gate Turn-Off SCR, 870A I(T)RMS, 600V V(DRM), 1200V V(RRM), 1 Element

WG6006R12 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-MXDB-H2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84配置:SINGLE
最大直流栅极触发电流:0.001 mAJESD-30 代码:O-MXDB-H2
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:870 A断态重复峰值电压:600 V
重复峰值反向电压:1200 V表面贴装:NO
端子形式:HIGH CURRENT CABLE端子位置:UNSPECIFIED
触发设备类型:GATE TURN-OFF SCRBase Number Matches:1

WG6006R12 数据手册

 浏览型号WG6006R12的Datasheet PDF文件第2页浏览型号WG6006R12的Datasheet PDF文件第3页 

与WG6006R12相关器件

型号 品牌 获取价格 描述 数据表
WG6006R14 IXYS

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Gate Turn-Off SCR, 870A I(T)RMS, 600V V(DRM), 1400V V(RRM), 1 Element
WG6006R16 IXYS

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Gate Turn-Off SCR, 870A I(T)RMS, 600V V(DRM), 100V V(RRM), 1 Element
WG6006R18 IXYS

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Gate Turn-Off SCR, 870A I(T)RMS, 600V V(DRM), 200V V(RRM), 1 Element
WG6006RXX ETC

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GATE TURN THYRISTORS
WG6007 IXYS

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Gate Turn-Off SCR, 870A I(T)RMS, 700V V(DRM), 100V V(RRM), 1 Element
WG6007F IXYS

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Gate Turn-Off SCR, 700A I(T)RMS, 700V V(DRM), 100V V(RRM), 1 Element
WG6007FR IXYS

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Symmetrical GTO SCR, 700A I(T)RMS, 700V V(DRM), 700V V(RRM), 1 Element
WG6007FR02 IXYS

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Gate Turn-Off SCR, 700A I(T)RMS, 700V V(DRM), 200V V(RRM), 1 Element
WG6007FR03 IXYS

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Silicon Controlled Rectifier, 700 A, 700 V, GATE TURN-OFF SCR
WG6007FR04 IXYS

获取价格

Gate Turn-Off SCR, 700A I(T)RMS, 700V V(DRM), 400V V(RRM), 1 Element