5秒后页面跳转
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| WG6008R04 | IXYS |
获取价格 |
Gate Turn-Off SCR, 800V V(DRM), 400V V(RRM), 1 Element |
|
| WG6008R05 | IXYS |
获取价格 |
Gate Turn-Off SCR, 800V V(DRM), 500V V(RRM), 1 Element |
|
| WG6008R06 | IXYS |
获取价格 |
Gate Turn-Off SCR, 800V V(DRM), 600V V(RRM), 1 Element |
|
| WG6008R07 | IXYS |
获取价格 |
Gate Turn-Off SCR, 800V V(DRM), 700V V(RRM), 1 Element |
|
| WG6008R08 | IXYS |
获取价格 |
Symmetrical GTO SCR, 800V V(DRM), 800V V(RRM), 1 Element |
|
| WG6009 | IXYS |
获取价格 |
Gate Turn-Off SCR, 870A I(T)RMS, 900V V(DRM), 100V V(RRM), 1 Element |
|
| WG6009F | IXYS |
获取价格 |
Gate Turn-Off SCR, 700A I(T)RMS, 900V V(DRM), 100V V(RRM), 1 Element |
|
| WG6009FR | IXYS |
获取价格 |
Symmetrical GTO SCR, 700A I(T)RMS, 900V V(DRM), 900V V(RRM), 1 Element |
|
| WG6009FR02 | IXYS |
获取价格 |
Gate Turn-Off SCR, 700A I(T)RMS, 900V V(DRM), 200V V(RRM), 1 Element |
|
| WG6009FR03 | IXYS |
获取价格 |
Gate Turn-Off SCR, 700A I(T)RMS, 900V V(DRM), 300V V(RRM), 1 Element |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
