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WF1M32B-120HC3 PDF预览

WF1M32B-120HC3

更新时间: 2024-01-25 04:49:22
品牌 Logo 应用领域
美高森美 - MICROSEMI 内存集成电路
页数 文件大小 规格书
14页 1003K
描述
Flash

WF1M32B-120HC3 技术参数

生命周期:Obsolete包装说明:HIP-66
Reach Compliance Code:compliant风险等级:5.68
Is Samacsys:N最长访问时间:120 ns
其他特性:ALSO HAVING 8-BIT MEMORY WIDTH备用内存宽度:16
JESD-30 代码:S-CPGA-P66长度:30.1 mm
内存密度:33554432 bit内存集成电路类型:FLASH
内存宽度:32功能数量:1
端子数量:66字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX32封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:PGA封装形状:SQUARE
封装形式:GRID ARRAY并行/串行:PARALLEL
编程电压:3.3 V座面最大高度:7.11 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:PIN/PEG端子节距:2.54 mm
端子位置:PERPENDICULAR宽度:30.1 mm
Base Number Matches:1

WF1M32B-120HC3 数据手册

 浏览型号WF1M32B-120HC3的Datasheet PDF文件第2页浏览型号WF1M32B-120HC3的Datasheet PDF文件第3页浏览型号WF1M32B-120HC3的Datasheet PDF文件第4页浏览型号WF1M32B-120HC3的Datasheet PDF文件第5页浏览型号WF1M32B-120HC3的Datasheet PDF文件第6页浏览型号WF1M32B-120HC3的Datasheet PDF文件第7页 
WF1M32B-XXX3  
1Mx32 3.3V NOR FLASH MODULE  
FEATURES  
 Access Times of 100, 120, 150ns  
 Low Power CMOS  
 Packaging  
 Embedded Erase and Program Algorithms  
 Built-in Decoupling Caps for Low Noise Operation  
 Erase Suspend/Resume  
• 66 pin, PGA Type (H), 1.185" square, Hermetic Ceramic  
HIP (Package 401)  
• 68 lead, Low Prole CQFP (G2U), 3.5mm (0.140") square  
(Package 510)  
• Supports reading data from or programing data to a  
sector not being erased  
 1,000,000 Erase/Program Cycles  
 Sector Architecture  
 Low Current Consumption  
 Typical values at 5MHz:  
• One 16KByte, two 8KBytes, one 32KByte, and fteen  
64kBytes (each chip)  
• 40mA Active Read Current  
• 80mA Program/Erase Current  
 Weight  
• Any combination of sectors can be concurrently erased.  
Also supports full chip erase  
• WF1M32B-XG2UX3 -8 grams typical  
• WF1M32B-XHX3 -13 grams typical  
Note: For programming information refer to Flash Programming 8M3 Application Note.  
 Organized as 1Mx32  
 Commercial, Industrial and Military Temperature Ranges  
 3.3 Volt for Read and Write Operations  
 Boot Code Sector Architecture (Bottom)  
This product is subject to change without notice.  
PIN CONFIGURATION FOR WF1M32B-XHX3  
TOP VIEW  
PIN DESCRIPTION  
I/O0-31  
A0-19  
WE#  
Data Inputs/Outputs  
Address Inputs  
Write Enable  
Chip Selects  
Output Enable  
Reset  
1
12  
23  
34  
45  
56  
I/O8  
I/O9  
I/O10  
A14  
A16  
A11  
A0  
RESET#  
CS2#  
GND  
I/O11  
A10  
I/O15  
I/O14  
I/O13  
I/O12  
OE#  
A17  
I/O24  
I/O25  
I/O26  
A7  
VCC  
CS4#  
NC  
I/O31  
I/O30  
I/O29  
I/O28  
A1  
CS1-4#  
OE#  
RESET#  
VCC  
I/O27  
A4  
Power Supply  
Ground  
GND  
A12  
NC  
Not Connected  
A9  
NC  
A5  
A2  
A15  
WE#  
I/O7  
A13  
A6  
A3  
BLOCK DIAGRAM  
A18  
I/O0  
I/O1  
I/O2  
VCC  
A8  
NC  
I/O23  
I/O22  
I/O21  
I/O20  
CS1#  
CS2#  
CS3#  
CS4#  
CS1#  
A19  
I/O6  
I/O16  
I/O17  
I/O18  
CS3#  
GND  
I/O19  
RESET#  
WE#  
OE#  
I/O5  
A0-19  
I/O3  
I/O4  
1M x 8  
1M x 8  
1M x 8  
1M x 8  
8
11  
22  
33  
44  
55  
66  
8
8
8
I/O16-23  
I/O24-31  
I/O0-7  
I/O8-15  
Microsemi Corporation reserves the right to change products or specications without notice.  
December 2012 © 2012 Microsemi Corporation. All rights reserved.  
Rev. 12  
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  

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