Datasheet > WED3DG644V100D1-M

WED3DG644V100D1-M

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
WEDC		动态存储器
页数	文件大小	规格书
8页	186K
描述
32MB - 4Mx64 SDRAM, UNBUFFERED

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WED3DG644V-D1

White Electronic Designs

OPERATING CURRENT CHARACTERISTICS

(V_CC= 3.3V, T_A= 0°C to +70°C)

Version

Parameter

Symbol

I_CC1

Conditions

133/100

Units

Note

Operating Current

(One bank active)

Burst Length = 1

t_RC≤ t_RC(min)

I_OL= 0mA

300

Precharge Standby Current

in Power Down Mode

I_CC2P

I_CC2PS

I_CC2N

CKE ≤ V_IL(max), t_CC= 10ns

CKE & CLK ≤ V_IL(max), t_CC= ∞

CKE ≥ V_IH(min), CS ≥ V_IH(min), tcc =10ns

Input signals are charged one time during 20

Precharge Standby Current

in Non-Power Down Mode

I_CC2NS

CKE ≥ V_IH(min), CLK ≥V_IL(max), t_CC= ∞

Input signals are stable

Active Standby Current in

Power-Down Mode

I_CC3P

I_CC3PS

I_CC3N

CKE ≥ V_IL(max), t_CC= 10ns

CKE & CLK ≤ V_IL(max), t_CC= ∞

CKE ≥ V_IH(min), CS ≥ V_IH(min), tcc = 10ns

Input signals are changed one time during 20ns

Active Standby Current in

Non-Power Down Mode

I_CC3NS

I_CC4

CKE ≥ V_IH(min), CLK ≤ V_IL(max), tcc = ∞

Input signals are stable

Io = mA

Operating Current (Burst mode)

Page burst

4 Banks activated

t_CCD= 2CLK

460

Refresh Current

I_CC5

I_CC6

360

t_RC≥ t_RC(min)

CKE ≤ 0.2V

Self Refresh Current

Notes:

Measured with outputs open.

Refresh period is 64ms.

June 2006

Rev. 3

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

1 2 345 6 7 8

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