Datasheet > WED3DG644V100D1-M

WED3DG644V100D1-M

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
WEDC		动态存储器
页数	文件大小	规格书
8页	186K
描述
32MB - 4Mx64 SDRAM, UNBUFFERED

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WED3DG644V-D1

White Electronic Designs

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Units

Voltage on any pin relative to V_SS

Voltage on V_CCsupply relative to V_SS

Storage Temperature

VIN, V_OUT

V_CC, V_CCQ

T_STG

-1.0 ~ 4.6

-55 ~ +150

°C

Power Dissipation

P_D

Short Circuit Current

I_OS

Note: Permanent device damage may occur if “ABSOLUTE MAXIMUM RATINGS” are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

RECOMMENDED DC OPERATING CONDITIONS

Voltage Referenced to: V_SS= 0V, T_A= 0°C to +70°C

Parameter

Symbol

V_CC

V_IH

Min

3.0

2.0

-0.3

2.4

—

Typ

3.3

3.0

—

Max

3.6

Unit

Note

Supply Voltage

Input High Voltage

Input Low Voltage

Output High Voltage

Output Low Voltage

Input Leakage Current

V_CCQ+0.3

0.8

V_IL

V_OH

V_OL

I_LI

—

I_OH= -2mA

I_OL= -2mA

—

0.4

-10

—

µA

Note: 1. V_IH(max)= 5.6V AC. The overshoot voltage duration is ≤ 3ns.

2. V_IL(min)= -2.0V AC. The undershoot voltage duration is ≤ 3ns.

3. Any input 0V ≤ V_IN≤ V_CCQ

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.

CAPACITANCE

TA = 25°C, f = 1MHz, V_CC= 3.3V, V_REF= 1.4V ± 200mV

Parameter

Symbol

C_IN1

Max

Unit

Input Capacitance (A0-A12)

Input Capacitance (RAS#,CAS#,WE#)

Input Capacitance (CKE0)

C_IN2

C_IN3

Input Capacitance (CLK0)

C_IN4

Input Capacitance (CS0#)

C_IN5

Input Capacitance (DQM0-DQM7)

Input Capacitance (BA0-BA1)

Data Input/Output Capacitance (DQ0-DQ63)

C_IN6

C_IN7

C_OUT

June 2006

Rev. 3

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

1 234 5 6 7 8

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