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WE256K8150CM PDF预览

WE256K8150CM

更新时间: 2024-11-06 14:36:47
品牌 Logo 应用领域
玛居礼 - MERCURY 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
14页 1258K
描述
EEPROM Module, 256KX8, 150ns, Parallel, CMOS, CDIP32, HERMETIC SEALED, DUAL CAVITY, BOTTOM BRAZED, CERAMIC, DIP-32

WE256K8150CM 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
包装说明:DIP,Reach Compliance Code:compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.51
风险等级:5.8最长访问时间:150 ns
JESD-30 代码:R-CDIP-T32JESD-609代码:e4
长度:40.6 mm内存密度:2097152 bit
内存集成电路类型:EEPROM MODULE内存宽度:8
功能数量:1端子数量:32
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:256KX8
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
编程电压:5 V认证状态:Not Qualified
筛选级别:MIL-STD-883座面最大高度:5.1 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子面层:Gold (Au)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:15.24 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

WE256K8150CM 数据手册

 浏览型号WE256K8150CM的Datasheet PDF文件第2页浏览型号WE256K8150CM的Datasheet PDF文件第3页浏览型号WE256K8150CM的Datasheet PDF文件第4页浏览型号WE256K8150CM的Datasheet PDF文件第5页浏览型号WE256K8150CM的Datasheet PDF文件第6页浏览型号WE256K8150CM的Datasheet PDF文件第7页 
WE512K8, WE256K8,  
WE128K8-XCX  
512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091  
512Kx8 BIT CMOS EEPROM MODULE  
FEATURES  
 Read Access Times of 150, 200, 250, 300ns  
 Automatic Page Write Operation  
 JEDEC Standard 32 Pin, Hermetic Ceramic DIP (Package  
• Internal Address and Data Latches for  
• 512 Bytes, 1 to 128 Bytes/Row, Four Pages  
 Page Write Cycle Time 10mS Max.  
 Data Polling for End of Write Detection  
 Hardware and Software Data Protection  
 TTL Compatible Inputs and Outputs  
300)  
 Commercial, Industrial and Military Temperature Ranges  
 MIL-STD-883 Compliant Devices Available  
 Write Endurance 10,000 Cycles  
 Data Retention at 25°C, 10 Years  
 Low Power CMOS Operation:  
• 3mA Standby Typical/100mA Operating Maximum  
FIGURE 1 – PIN CONFIGURATION  
TOP VIEW  
PIN DESCRIPTION  
A0-18  
I/O0-7  
CS#  
OE#  
WE#  
VCC  
Address Inputs  
Data Input/Output  
Chip Select  
Output Enable  
Write Enable  
+5.0V Power  
Ground  
A18  
A16  
A15  
A12  
A7  
1
2
3
4
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
VCC  
WE#  
A17  
A14  
A13  
A8  
VSS  
BLOCK DIAGRAM  
5
A6  
6
A0-16  
I/O0-7  
A5  
7
A9  
A4  
A3  
A2  
A1  
8
9
A11  
OE#  
A10  
CS#  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
WE#  
OE#  
10  
11  
12  
13  
14  
15  
16  
A0  
128K x 8  
128K x 8  
128K x 8  
128K x 8  
I/O0  
I/O1  
I/O2  
VSS  
A17  
A18  
Decoder  
CS#  
Microsemi Corporation reserves the right to change products or specications without notice.  
August 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 4  
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  

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