WDCT10N680LK-HAF
N-Channel Enhancement Mode MOSFET
Drain
Features
• Halogen and Antimony Free(HAF),
Gate
RoHS compliant
• Built-in G-S Protection Diode
1.Gate 2.Drain 3.Source
TO-220FB Plastic Package
• Typical ESD Protection HBM Class 2
Source
Classification Voltage Range(V)
0A
0B
1A
1B
1C
2
< 125
Key Parameters
Parameter
BVDSS
125 to < 250
250 to < 500
500 to < 1000
1000 to < 2000
2000 to < 4000
4000 to < 8000
≥ 8000
Value
100
Unit
V
68 @ VGS = 10 V
92 @ VGS = 4.5 V
1.9
RDS(ON) Max
mΩ
VGS(th) typ
Qg typ
V
3A
3B
9 @ VGS = 10 V
nC
Absolute Maximum Ratings(at Ta = 25℃ unless otherwise specified)
Parameter
Symbol
VDS
Value
100
Unit
V
V
Drain-Source Voltage
Gate-Source Voltage
VGS
± 20
Tc = 25℃
16
10
ID
A
Drain Current
Tc = 100℃
Peak Drain Current, Pulsed 1)
IDM
IAS
45
A
A
4.2
4.4
Avalanche Current
Single Pulse Avalanche Energy 2)
EAS
mJ
W
℃
PD
26
Power Dissipation
Tc = 25℃
TJ, Tstg
- 55 to + 150
Operating Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Symbol
RθJC
Max.
4.8
Unit
Thermal Resistance from Junction to Case
℃
℃
/W
/W
Thermal Resistance from Junction to Ambient
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.5 mH, Rg = 25 Ω, IAS = 4.2 A, VGS = 10 V.
RθJA
55
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Dated: 30/05/2023 Rev: 01