Datasheet > WDCTE6N030LS

WDCTE6N030LS

更新时间： 2024-11-06 14:52:15

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	755K
描述
功率金氧半电晶体

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中文翻译

获取价格

数据手册

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WDCTE6N030LS 数据手册

WDCTE6N030LS-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• Low R_DS(ON)

• Low Gate-Source Threshold Voltage

Gate

• Halogen and Antimony Free(HAF),

RoHS compliant

1.Gate 2.Drain 3.Source

TO-220FB Plastic Package

Source

Key Parameters

Parameter

BV_DSS

Value

Unit

3.3 @ V_GS= 10 V

4.8 @ V_GS= 4.5 V

1.5

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

75 @ V_GS= 10 V

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

T_c= 100℃

I_D

Drain Current

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

480

Single Pulse Avalanche Energy ²⁾

E_AS

180

℃

P_tot

55.9

Power Dissipation

T_c= 25℃

T_J, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

2.2

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25°C, L = 0.1 mH, R_g= 25 Ω, I_AS= 60 A, V_GS= 10 V.

R_θJA

1 / 7

Dated: 11/05/2022 Rev: 02

12 3 4 5 6 7

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