Datasheet > WCR1K2N65TG-3/TR

WCR1K2N65TG-3/TR

更新时间： 2024-02-02 16:30:36

品牌	Logo	应用领域
韦尔 - WILLSEMI		/
页数	文件大小	规格书
9页	1478K
描述
650V N-Channel Super Junction MOSFET

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WCR1K2N65TG-3/TR 数据手册

WCR1K2N65 series

WCR1K2N65T/TF/TG

650V N-Channel Super Junction MOSFET

Description

Features



700V@T_J=150°C

Typ.R_DS(on)=1.05Ω

Low gate charge

The WCR1K2N65 series is new generation of high voltage

MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.This advanced technology

has been tailored to minimize conduction loss, provide

superior switching performance, and withstand extreme

dv/dt rate and higher avalanche energy. This device is

suitable for various AC/DC power conversion in switching

mode operation for higher efficiency.

100% avalanche tested

100% R_gtested

Order Information

Device

Package

Marking

Units/Tube Units/Real

WCR1K2N65T-3/T

WCR1K2N65TF-3/T

WCR1K2N65TG-3/TR

TO-220

WCR1K2N65TYW⁽¹⁾

WCR1K2N65TFYW⁽²⁾

WCR1K2N65TGYW⁽³⁾

TO-220F

TO-252E-2L

3000

Note 1: WCR1K2N65T=Device code ;Y=Year ;W=Week (A~z);

Note 2: WCR1K2N65TF=Device code ;Y=Year ;W=Week (A~z);

Note 3: WCR1K2N65TG=Device code ;Y=Year ;W=Week (A~z);

TO-220F

TO-220

TO-252

Absolution Maximum RatingsT_A=25⁰C unless otherwise noted

WCR1K2N65T

WCR1K2N65TG

650

WCR1K2N65TF

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±30

T_C=25°C

4.0

2.5

3.4

2.1

Continuous Drain Current^A

I_D

T_C=100°C

Pulsed Drain Current

I_DM

Single Pulsed Avalanche Energy^B

T_C=25°C

Derateabove 25°C

E_AS

P_D

Power Dissipation

0.5

0.24

W/°C

°C

Operating and Storage Temperature Range

Lead Temperature

T_J,T_STG

T_L

-55~150

260

°C

Thermal Resistance Ratings

Maximum Junction-to-Ambient^D

Maximum Junction-to-Case

R_th(ch-A)

R_th(ch-c)

°C/W

4.2

Will Semiconductor Ltd.

Oct，2018-Rev.1.0

12 3 4 5 6 7...9

中文翻译

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