Datasheet > WCR250N65TH

WCR250N65TH

更新时间： 2024-01-21 22:39:51

品牌	Logo	应用领域
韦尔 - WILLSEMI		/
页数	文件大小	规格书
8页	1417K
描述
650V N-Channel Super Junction MOSFET

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WCR250N65TH 数据手册

WCR250N65 series

WCR250N65TF/TH

650V N-Channel Super Junction MOSFET

Description

Features



700V@T_J=150°C

Typ.R_DS(on)=0.21Ω

Low gate charge

The WCR250N65 series is new generation of high voltage

MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.This advanced technology

has been tailored to minimize conduction loss, provide

superior switching performance, and withstand extreme

dv/dt rate and higher avalanche energy. This device is

100% avalanche tested

100% R_gtested

suitable for various AC/DC power conversion in switching

mode operation for higher efficiency.

Order Information

Device

Package

Marking

Units/Tube Units/Real

WCR250N65TF-3/T

WCR250N65TH-3/TR

TO-220F

WCR250N65TFYW⁽¹⁾

WCR250N65THYW⁽²⁾

TO-263E-2L

800

Note 1: WCR250N65TF=Device code ;Y=Year ;W=Week (A~z);

Note 2: WCR250N65TH=Device code ;Y=Year ;W=Week (A~z);

TO-220F

TO-263

Absolution Maximum RatingsT_A=25⁰C unless otherwise noted

Parameter

Drain-Source Voltage

Symbol

V_DS

WCR250N65TH

WCR250N65TF

Unit

650

Gate-Source Voltage

Continuous Drain Current^A

Pulsed Drain Current

V_GS

±30

T_C=25°C

13.8

7.9

I_D

T_C=100°C

I_DM

Single Pulsed Avalanche Energy^B

T_C=25°C

Derateabove 25°C

E_AS

270

125

P_D

Power Dissipation

0.31

W/°C

°C

Operating and Storage Temperature Range

Lead Temperature

T_J,T_STG

T_L

-55~150

260

°C

Thermal Resistance Ratings

Maximum Junction-to-Ambient^D

Maximum Junction-to-Case

R_θJA

R_θJC

°C/W

3.2

Will Semiconductor Ltd.

Oct，2018 - Rev.1.1

12 3 4 5 6 7 8

中文翻译

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