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W7NCF01GH21ISABJM1G PDF预览

W7NCF01GH21ISABJM1G

更新时间: 2024-11-01 13:30:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 内存集成电路
页数 文件大小 规格书
13页 180K
描述
Flash Card, 1GX8, 250ns, CARD-50

W7NCF01GH21ISABJM1G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:CARD
包装说明:,针数:50
Reach Compliance Code:compliant风险等级:5.57
Is Samacsys:N最长访问时间:250 ns
其他特性:IT ALSO OPERATES WITH 4.5V TO 5.5V SUPPLYJESD-30 代码:R-XXMA-X50
内存密度:8589934592 bit内存集成电路类型:FLASH CARD
内存宽度:8功能数量:1
端子数量:50字数:1073741824 words
字数代码:1000000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1GX8封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
编程电压:3.3 V认证状态:Not Qualified
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIED类型:NAND TYPE
Base Number Matches:1

W7NCF01GH21ISABJM1G 数据手册

 浏览型号W7NCF01GH21ISABJM1G的Datasheet PDF文件第2页浏览型号W7NCF01GH21ISABJM1G的Datasheet PDF文件第3页浏览型号W7NCF01GH21ISABJM1G的Datasheet PDF文件第4页浏览型号W7NCF01GH21ISABJM1G的Datasheet PDF文件第5页浏览型号W7NCF01GH21ISABJM1G的Datasheet PDF文件第6页浏览型号W7NCF01GH21ISABJM1G的Datasheet PDF文件第7页 
W7NCF-H-M1 Series  
White Electronic Designs  
Medical Series CompactFlash® Card  
FEATURES  
„
Storage Capacities:  
128MB, 256MB, 512MB,1GB, 2GB, 4GB and  
8GB  
„
Environment conditions:  
Operating temperature: -40°C to 85°C  
Storage temperature: -55°C to 125°C  
„
„
CompactFlash® Compatibility  
CFA standard 2.1 compliant  
3.3V or 5.0V single power supply  
50 pin connector with Type-I form factor (3.3mm  
thickness)  
„
„
Dimensions:  
Type I card : 36.4mm(L) x 42.8mm(W) x  
3.3mm(H)  
256 Bytes of attribute memory  
Power consumption  
Highly resistant to data corruption due to power loss  
or card removal  
5V operation  
Active mode:  
DESCRIPTION  
Write operation: 28 mA (Typ.), 30 mA (Max.)  
Read operation: 23 mA (Typ.), 30 mA (Max.)  
Sleep mode: 2.0mA (max.)  
3.3V operation  
The W7NCF-H-M1 series CompactFlash® family is  
designed for high reliability and robust operation. This  
product not only offers a strictly controlled and locked bill  
of materials but also the robust operation which is desired  
in many medical applications. The product’s reliability  
backbone is established by using a 32 bit RISC based  
controller along with the best SLC (single level cell) NAND  
ash memory devices. Utilizing proprietary techniques, our  
card offers both rmware and hardware features which  
mitigate problems relating to power disturbances and  
interruptions. Implemented is the industry leading ECC  
protection which is capable of correcting 6 bytes in every  
512 byte sector. This leading ECC protection combined  
with patented static wear leveling technology provides the  
highest read/write endurance possible.  
Active mode:  
Write operation: 28 mA (Typ.), 30 mA (Max.)  
Read operation: 23 mA (Typ.), 30 mA (Max.)  
Sleep mode: 2.0mA (max.  
„
„
RoHS compliant  
Interface modes  
PC card memory mode  
PC card I/O mode  
True IDE mode  
„
„
„
„
„
Less than 1 Error in 1014 bits read  
CompactFlash® is a trademark of SanDisk Corporation and is licensed royalty-free to the  
CFA, which in turn will license it royalty-free to CFA members.  
CFA: CompactFlash® Association.  
MTBF > 4,000,000 hours  
High shock & vibration tolerance  
W/E Endurance: 4,000,000 write/erase cycles  
High performance  
Interface Transfer speed in PIO mode 4 or Multi  
Word DMA mode 2 cycle timing; up to 16.7  
MB/second (PIO mode 3 & 4 are available in  
IDE mode only).  
sector  
Typical write: 5.0 MBytes/s in ATA PIO mode 4  
Typical read: 7.0 MBytes/s in ATA PIO mode 4  
On card ECC up to 6 Bytes per 512 Byte data  
March 2007  
Rev. 2  
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  

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