Datasheet > W28NK60Z

W28NK60Z

更新时间： 2024-11-22 03:17:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
10页	213K
描述
N-CHANNEL 600 V - 0.155з - 27A TO-247 Zener-Protected SuperMESH MOSFET

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W28NK60Z 数据手册

STW28NK60Z

N-CHANNEL 600 V - 0.155Ω - 27A TO-247

Zener-Protected SuperMESH™ MOSFET

Table 1: General Features

Figure 1: Package

TYPE

DSS

DS(on)

STW28NK60Z

600 V < 0.185 Ω 27 A 350 W

■ TYPICAL R (on) = 0.155 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VERY GOOD MANUFACTURING

REPEATIBILITY

TO-247

DESCRIPTION

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established

strip-based PowerMESH™ layout. In addition to

pushing on-resistance significantly down, special

care is taken to ensure a very good dv/dt capability

for the most demanding application. Such series

complements ST full range of high vltage MOS-

FETs including revolutionary MSmesh™ products.

Figure 2: Internal Schematic Diagram

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES

■ WELDING MACHINES

■ LIGHTING

Table 2: Order Codes

PART NUMBER

MARKING

PACKAGE

PACKAGING

STW28NK60Z

W28NK60Z

TO-247

TUBE

Rev. 1

November 2004

1/10

12 3 4 5 6 7...10

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