Datasheet > W12NK90Z

W12NK90Z

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	268K
描述
N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET

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W12NK90Z 数据手册

STW12NK90Z

Electrical ratings

Table 1.

Symbol

Absolute maximum ratings

Parameter

Value

Unit

V_DS

V_GS

I_D

Drain-source voltage (V_GS= 0)

Gate- source voltage

900

Drain current (continuous) at T_C= 25°C

Drain current (continuous) at T_C= 100°C

Drain current (pulsed)

I_D

(1)

I_DM

P_tot

Total dissipation at T_C= 25°C

Derating Factor

230

1.85

6000

4.5

W/°C

V_ESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5KΩ)

Single pulse avalanche energy

Storage temperature

(2)

E_AS

T_stg

T_j

-55 to 150

°C

Max. operating junction temperature

1. Pulse width limited by safe operating area.

2. I_SD≤11A, di/dt ≤200A/µs, V_DD≤V_(BR)DSS, T_j≤T_JMAX.

Table 2.

Thermal data

Rthj-case Thermal resistance junction-case max

0.54

°C/W

°C

Rthj-amb Thermal resistance junction-ambient max

T_J

Maximum lead temperature for soldering purpose

300

Table 3.

Symbol

Avalanche characteristics

Parameter

Max value

Unit

Avalanche current, repetitive or not-repetitive

(pulse width limited by T_jmax)

I_AR

Single pulse avalanche energy

E_AS

500

(starting T_j= 25 °C, I_D= I_AR, V_DD= 50 V)

Table 4.

Symbol

Gate-source zener diode

Parameter

Test conditions

Min.

Typ.

Max. Unit

Gate-source breakdown

voltage

BV_GSO

Igs= 1mA (open drain)

3/14

1 234 5 6 7...14

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