Datasheet > W12NK90Z

W12NK90Z

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	268K
描述
N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET

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W12NK90Z 数据手册

Electrical ratings

STW12NK90Z

1.1

Protection features of gate-to-source zener diodes

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

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