Datasheet > W12NK90Z

W12NK90Z

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	268K
描述
N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET

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W12NK90Z 数据手册

Electrical characteristics

STW12NK90Z

Max. Unit

Table 7.

Symbol

Source drain diode

Parameter

Test conditions

Min.

Typ.

Source-drain current

I_SD

Source-drain current

(pulsed)

(1)

I_SDM

(2)

V_SD

t_rr

Forward on voltage

I_SD= 11A, V_GS= 0

1.6

Reverse recovery time

I_SD= 10A, di/dt = 100A/µs,

728

7.8

µC

Q_rr

Reverse recovery charge V_DD= 50V, T_j= 25°C

I_RRM

Reverse recovery current (see Figure 15)

21.6

t_rr

Reverse recovery time

I_SD= 10A, di/dt = 100A/µs,

964

µC

Q_rr

Reverse recovery charge V_DD= 50V, T_j= 150°C

I_RRM

Reverse recovery current (see Figure 15)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

6/14

1...3 4 567 8 9...14

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