W005-W10
SILICON BRIDGE RECTIFIERS
VOLTAGE RANGE: 50 - 1000V
CURRENT: 1.5A
Features
Glass passivated chip
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
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!
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0.39 (10.0)
0.31 (7.87)
0.22 (5.59)
0.18 (4.57)
AC
+
-
1.00 (25.4)
MIN.
Mechanical Data
0.034 (0.86)
0.028 (0.71)
!
Case : Reliable low cost construction
utilizing molded plastic technique
Epoxy : UL94V-O rate flame retardant
Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
Polarity : Polarity symbols marked on case
Mounting position : Any
!
!
-
AC
0.22 (5.59)
0.18 (4.57)
AC
+
!
!
0.22 (5.59)
0.18 (4.57)
Weight : 1.29 grams
!
Dimension in inches and (millimeter)
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Symbol
Unit
W005 W01
W02
W04
W06
W08
W10
1000 Volts
700 Volts
RRM
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
RMS
V
Maximum DC Blocking Voltage
VDC
100
1000 Volts
Maximum Average Forward Current
0.375" (9.5 mm) lead length
F(AV)
I
1.5
Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing ( t < 8.3 ms. )
IFSM
I2t
50
10
1.0
10
1.0
14
36
Amps.
A2S
Maximum Forward Voltage per Diode at IF = 1.0 Amp.
VF
Volts
°
R
m
A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 C
I
°
R(H)
I
Ta = 100 C
mA
pf
Typical Junction Capacitance per Diode (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
CJ
°
q
R JA
C/W
°
TJ
- 50 to + 150
- 50 to + 150
C
STG
°
C
T
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board mounting.
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