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W04G-E4/51 PDF预览

W04G-E4/51

更新时间: 2024-11-21 19:48:55
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 85K
描述
Diode Rectifier Bridge Single 400V 1.5A 4-Pin Case WOG Bulk

W04G-E4/51 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:O-PBCY-W4针数:4
Reach Compliance Code:unknownHTS代码:8541.10.00.80
风险等级:5.2其他特性:UL RECOGNIZED
最小击穿电压:400 V外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:O-PBCY-W4JESD-609代码:e4
最大非重复峰值正向电流:50 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:400 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Silver (Ag)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

W04G-E4/51 数据手册

 浏览型号W04G-E4/51的Datasheet PDF文件第2页浏览型号W04G-E4/51的Datasheet PDF文件第3页浏览型号W04G-E4/51的Datasheet PDF文件第4页 
W005G, W01G, W02G, W04G, W06G, W08G, W10G  
www.vishay.com  
Vishay General Semiconductor  
Glass Passivated Single-Phase Bridge Rectifier  
FEATURES  
• UL recognition, file number E54214  
• Ideal for printed circuit boards  
• Typical IR less than 0.1 μA  
~
e4  
+
~
• High case dielectric strength  
• High surge current capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
+
~
~
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
Case Style WOG  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
General purpose use in AC/DC bridge full wave rectification  
for power supply, adapter, charger, lighting ballaster on  
consumers, and home appliances applications.  
Package  
WOG  
1.5 A  
IF(AV)  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
MECHANICAL DATA  
IFSM  
IR  
50 A  
5 ꢀA  
Case: WOG  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E4 - RoHS-compliant, commercial grade  
VF at IF = 1.0 A  
TJ max.  
1.0 V  
150 °C  
Quad  
Terminals: Silver plated leads, solderable per  
J-STD-002 and JESD22-B102  
Diode variations  
Polarity: As marked on body  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL W005G W01G  
W02G  
200  
W04G  
400  
W06G  
600  
W08G  
800  
W10G UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
1000  
700  
V
V
V
140  
280  
420  
560  
Maximum DC blocking voltage  
100  
200  
400  
600  
800  
1000  
Maximum average forward rectified current at  
IF(AV)  
1.5  
50  
A
0.375" (9.5 mm) lead length at TA = 25 °C  
Peak forward surge current single sine-wave  
superimposed on rated load  
IFSM  
I2t  
A
Rating for fusing (t < 8.3 ms)  
10  
A2s  
°C  
Operating junction and storage temperature range TJ, TSTG  
- 55 to + 150  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUES  
UNIT  
Maximum instantaneous forward  
voltage per diode  
IF = 1.0 A  
VF  
1.0  
V
TA = 25 °C  
5.0  
500  
14  
Maximum DC reverse current at rated  
DC blocking voltage per diode  
IR  
ꢀA  
pF  
TA = 125 °C  
Typical junction capacitance per diode 4.0 V, 1 MHz  
CJ  
Revision: 08-Jul-13  
Document Number: 88769  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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