Datasheet > W04M

W04M

更新时间： 2024-09-16 03:18:11

品牌	Logo	应用领域
强茂 - PANJIT		二极管
页数	文件大小	规格书
2页	431K
描述
1.0 AMPERES MINIATURE SINGLE-PHASE SILICON BRIDGE

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数据手册

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W04M 数据手册

DATA SHEET

W005M~W10M

1.0 AMPERES MINIATURE SINGLE-PHASE SILICON BRIDGE

Unit: inch (mm)

1.0 Amperes

CURRENT

50 to 1000 Volts

VOLTAGE

FEATURES

.370(9.4)

.339(8.6)

• Plastic material used carries Underwriters Laboratory recognition.

• High surge dielectric strength.

• Typical IR LESS Than 1uA.

• Exceeds environmental standards of MIL-STD-19500

• Ideal for printed circuit board.

• High temperature soldering guaranteed: 265^OC/10 seconds/ .375”

(9.5 mm) lead length/5 Ibs. (2.3kg) tension

• Pb free product are available : 99% Sn can meet RoHS environment

substance directive request

.031(0.8)

.028(0.7)

MECHANICALDATA

Case: Reliable low cost construction utilizing molded plastic technique

.220(5.6)

.181(4.6)

Bottom View

Terminals: Leads solderable per MIL-STE-750, Method 2026

Mounting Position: Any

.220(5.6)

.181(4.6)

Weight: 0.04 ounces, 1.1 grams.

MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS

Rating at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, Single phase, half wave, 60Hz.

For Capacitive load derate current by 20%.

PARAMETER

SYMBOL W005M W01M

W02M W04M

W06M

600

W08M

800

W10M

UNITS

Maximum Recurrent Peak Reverse Voltage

RRM

RMS

100

200

140

200

400

1000

700

Maximum RMS Bridge Input Voltage

280

400

1.0

420

600

560

800

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Rectified Output Current .375"

IAV

(9.5mm ) Lead Length at TA

=25^OC

Peak Forward Surge Current : 8.3ms single half sine-wave

superimposed on rated load (JEDEC method)

FSM

50.0

5.0

A²s

I²t Rating for fusing ( t<8.35ms)

I ²

Maximum Forward Voltage Drop per Element at 1.0A

1.0

Maximum DC Reverse Current T

at Rated DC Blocking Voltage T

=25 ^OC

=100 ^OC

10.0

1000

µA

Typical Junction capacitance per bridge element (Note 1)

Operating Junction Temperature Range

Storage Temperature Range

^OC

-55 to + 125

-55 to + 150

TSTG

NOTES:

1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.

PAGE . 1

STAD-NOV.06.2003

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