Datasheet > VVZ40

VVZ40

更新时间： 2022-11-24 21:45:42

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	52K
描述
Three Phase Half Controlled Rectifier Bridge

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数据手册

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VVZ40 数据手册

VVZ 40

I_dAVM= 43 A

V_RRM= 1200-1600 V

Three Phase Half Controlled

Rectifier Bridge

V_RSM

V_DSM

V_RRM

V_DRM

Type

1300

1500

1700

1200

1400

1600

VVZ 40-12io1

VVZ 40-14io1

VVZ 40-16io1

Features

Symbol

Test Conditions

Maximum Ratings

●

Package with DCB ceramic base plate

Isolation voltage 3600 V~

Planar passivated chips

Soldering terminals

I_dAV

I_dAVM

I_FRMS, I_TRMS

T_K= 100°C; module

module

per leg

●

I_FSM, I_TSM

T_VJ= 45°C;

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

320

340

UL registered E 72873

T_VJ= T_VJM

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

290

310

Applications

●

Input rectifier for switch mode power

I²t

T_VJ= 45°C

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

510

485

A²s

supplies (SMPS)

Softstart capacitor charging

Electric drives and auxiliaries

●

T_VJ= T_VJM

V_R= 0

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

420

400

A²s

Advantages

(di/dt)_cr

T_VJ= T_VJM

repetitive, I_T= 50 A

150

A/µs

●

Easy to mount with two screws

Space and weight savings

Improved temperature and power

cycling

f =400 Hz, t_P=200 µs

V_D= 2/3 V_DRM

I_G= 0.3 A,

●

non repetitive, I_T= 1/3 • I_dAV

500

1000

A/µs

V/µs

di_G/dt = 0.3 A/µs

(dv/dt)_cr

T_VJ= T_VJM; V_DR= 2/3 V_DRM

R_GK= ∞; method 1 (linear voltage rise)

Dimensions in mm (1 mm = 0.0394")

V_RGM

P_GM

T_VJ= T_VJM

I_T= I_TAVM

t_p= 30 µs

t_p= 500 µs

t_p= 10 ms

≤

P_GAVM

0.5

T_VJ

T_VJM

T_stg

-40...+125

125

-40...+125

°C

V_ISOL

50/60 Hz, RMS

t = 1 min

t = 1 s

3000

3600

_ISOL≤ 1 mA

M_d

Mounting torque

(M5)

(10-32 UNF)

2-2.5

18-22

lb.in.

Weight

typ.

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.

IXYS reserves the right to change limits, test conditions and dimensions.

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