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VUO52-20NO1 PDF预览

VUO52-20NO1

更新时间: 2024-02-18 00:57:59
品牌 Logo 应用领域
IXYS 局域网二极管
页数 文件大小 规格书
5页 145K
描述
Bridge Rectifier Diode, 3 Phase, 54A, 2000V V(RRM), Silicon, ROHS COMPLIANT, MODULE-7

VUO52-20NO1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MODULE
包装说明:R-XUFM-X7针数:7
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:2.32其他特性:UL RECOGNIZED
外壳连接:ISOLATED配置:BRIDGE, 6 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.46 VJESD-30 代码:R-XUFM-X7
JESD-609代码:e1最大非重复峰值正向电流:325 A
元件数量:6相数:3
端子数量:7最高工作温度:130 °C
最低工作温度:-40 °C最大输出电流:54 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:2000 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VUO52-20NO1 数据手册

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VUO52-20NO1  
Ratings  
Package V1-A-Pack  
Symbol  
IRMS  
Definition  
Conditions  
per terminal  
min. typ. max.  
100  
Unit  
A
°C  
°C  
g
RMS current  
Tstg  
-40  
-40  
125  
150  
storage temperature  
virtual junction temperature  
TVJ  
Weight  
MD  
37  
2
2.5 Nm  
mounting torque  
terminal to terminal  
terminal to backside  
dSpp/App  
dSpb/Apb  
6.0  
12.0  
mm  
mm  
V
creepage distance on surface | striking distance through air  
t = 1 second  
V
3600  
3000  
isolation voltage  
ISOL  
50/60 Hz, RMS; IISOL 1 mA  
t = 1 minute  
V
Date Code Location  
yywwA  
Part Number (Typ)  
Lot No.:  
2D Data Matrix  
Ordering  
Standard  
Part Number  
Marking on Product  
Delivery Mode  
Box  
Quantity Code No.  
VUO52-20NO1  
VUO52-20NO1  
10  
463329  
Similar Part  
Package  
Voltage class  
VUO52-08NO1  
V1-A-Pack  
800  
1200  
1400  
1600  
1800  
2200  
1600  
1800  
VUO52-12NO1  
VUO52-14NO1  
VUO52-16NO1  
VUO52-18NO1  
VUO52-22NO1  
VUO34-16NO1  
VUO34-18NO1  
V1-A-Pack  
V1-A-Pack  
V1-A-Pack  
V1-A-Pack  
V1-A-Pack  
V1-A-Pack  
V1-A-Pack  
TVJ = 150°C  
* on die level  
Equivalent Circuits for Simulation  
Rectifier  
V0  
I
R0  
threshold voltage  
slope resistance *  
V0 max  
R0 max  
0.83  
10.2  
V
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20130305b  
© 2013 IXYS all rights reserved  

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