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VUC36-12GO2 PDF预览

VUC36-12GO2

更新时间: 2024-11-05 20:15:51
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网栅极
页数 文件大小 规格书
2页 58K
描述
Silicon Controlled Rectifier, 48.67A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-8

VUC36-12GO2 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-XUFM-X8Reach Compliance Code:compliant
风险等级:5.7其他特性:UL RECOGNIZED
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN THREE PHASE RECTIFIER DIODE BRIDGE
最大直流栅极触发电流:80 mAJESD-30 代码:R-XUFM-X8
JESD-609代码:e4元件数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:48.67 A断态重复峰值电压:1200 V
重复峰值反向电压:1200 V表面贴装:NO
端子面层:Silver (Ag)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

VUC36-12GO2 数据手册

 浏览型号VUC36-12GO2的Datasheet PDF文件第2页 
VUC 36  
IdAVM  
ITAVM  
=
=
39 A  
31 A  
Three Phase  
Rectifier Bridge  
with Fast Diodes and "Softstart" Thyristor  
VRRM = 1200/1600 V  
4
3
2
2
4
8
1
VRSM  
VRRM  
Type  
7
6
5
V
V
1
6
7
1300  
1700  
1200  
1600  
VUC 36-12go2  
VUC 36-16go2  
3
8
5
Symbol  
Conditions  
Maximum Ratings  
Diode Thyristor  
Features  
Package with DCB ceramic base plate  
Isolation voltage 3600 V~  
Planar passivated chips  
Fast recovery diodes to reduce EMI  
Separate thyristor for softstart  
Solderable terminals  
IdAV  
IdAVM  
ITAVM  
TK = 85°C, module  
module  
TK = 85°C, DC  
34  
39  
-
-
-
31  
A
A
A
IFSM, ITSM  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine 300  
t = 8.3 ms (60 Hz), sine 330  
400  
440  
A
A
UL registered E 72873  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine 270  
t = 8.3 ms (60 Hz), sine 300  
360  
400  
A
A
Applications  
Input rectifier for switching power  
supplies (SMPS)  
Softstart capacitor charging  
Electric drives and auxiliaries  
I2t  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine 450  
t = 8.3 ms (60 Hz), sine 460  
800  
810  
A2s  
A2s  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine 365  
t = 8.3 ms (60 Hz), sine 380  
650  
670  
A2s  
A2s  
Advantages  
Easy to mount with two screws  
Space and weight savings  
Improved temperature & power cycling  
Up to 10 dB lower EMI/RFI  
compared to standard rectifier  
(di/dt)cr  
TVJ = TVJM  
repetitive, IT = 50 A  
150  
A/µs  
f= 400 Hz, tP = 200 µs  
VD = 2/3 VDRM  
IG = 0.3 A  
diG /dt = 0.3 A/µs  
non repetitive, IT = ITAVM  
500  
200  
A/µs  
V/µs  
(dv/dt)cr  
TVJ = TVJM; VDR = 2/3 VDRM  
RGK = ; method 1 (linear voltage rise)  
VRGM  
PGM  
10  
10  
V
Dimensions in mm (1 mm = 0.0394")  
TVJ = TVJM  
IT = ITAVM  
tp = 30 µs  
tp = 10 ms  
<
<
W
1
0.5  
W
W
PGAVM  
TVJ  
TVJM  
Tstg  
-40...+125  
125  
-40...+125  
°C  
°C  
°C  
VISOL  
50/60 Hz, RMS  
IISOL < 1 mA  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
Md  
Mounting torque  
(M5)  
2-2.5  
Nm  
(10-32 UNF)  
18-22  
lb.in.  
Weight  
typ.  
28  
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated  
IXYS reserves the right to change limits, test conditions and dimensions.  
20100709b  
© 2010 IXYS All rights reserved  
1 - 2  

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