Datasheet > VSMF3710-GS08

VSMF3710-GS08

更新时间： 2024-11-09 06:02:35

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
6页	136K
描述
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero

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替代型号

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VSMF3710-GS08 数据手册

VSMF3710

Vishay Semiconductors

High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm,

GaAlAs Double Hetero

FEATURES

• Package type: surface mount

• Package form: PLCC-2

• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75

• Peak wavelength: λ_p= 890 nm

• High reliability

• High radiant power

• High radiant intensity

94 8553

• Angle of half intensity: ϕ = 60°

• Low forward voltage

• Suitable for high pulse current operation

• High modulation band width: f_c= 12 MHz

• Good spectral matching with Si photodetectors

DESCRIPTION

VSMF3710 is an infrared, 890 nm emitting diode in GaAlAs

double hetero (DH) technology with high radiant power and

• Floor life: 4 weeks, MSL 2a, acc. J-STD-020

• Lead (Pb)-free reflow soldering

• Lead (Pb)-free component in accordance with

high speed, molded in a PLCC-2 package for surface

RoHS 2002/95/EC and WEEE 2002/96/EC

mounting (SMD).

APPLICATIONS

• High speed IR data transmission

• High power emitter for low space applications

• High performance transmissive or reflective sensors

PRODUCT SUMMARY

COMPONENT

I_e(mW/sr)

ϕ (deg)

_P(nm)

t_r(ns)

VSMF3710

890

Note

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

VSMF3710-GS08

VSMF3710-GS18

PACKAGING

REMARKS

PACKAGE FORM

PLCC-2

Tape and reel

MOQ: 7500 pcs, 1500 pcs/reel

MOQ: 8000 pcs, 8000 pcs/reel

PLCC-2

Note

MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

Forward current

V_R

I_F

100

200

Peak forward current

Surge forward current

Power dissipation

t_p/T = 0.5, t_p= 100 µs

I_FM

I_FSM

P_V

t_p= 100 µs

160

www.vishay.com

292

For technical questions, contact: emittertechsupport@vishay.com

Document Number: 81241

Rev. 1.6, 31-Jul-08

12 3 4 5 6

中文翻译

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VSMF3710-GS08 替代型号

型号	品牌	替代类型	描述	数据表
VSMF3710-GS18	VISHAY	完全替代	High Speed Infrared Emitting Diode, 890 nm RoHS Compliant, Released for Lead (Pb)-free Sol

与VSMF3710-GS08相关器件

型号	品牌	获取价格	描述	数据表
VSMF3710-GS18	VISHAY	获取价格	High Speed Infrared Emitting Diode, 890 nm RoHS Compliant, Released for Lead (Pb)-free Sol
VSMF4710	VISHAY	获取价格	High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
VSMF4710_09	VISHAY	获取价格	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
VSMF4710-GS08	VISHAY	获取价格	High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
VSMF4710-GS18	VISHAY	获取价格	High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
VSMF4720	VISHAY	获取价格	High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
VSMF4720_09	VISHAY	获取价格	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
VSMF4720-GS08	VISHAY	获取价格	High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
VSMF4720-GS18	VISHAY	获取价格	High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
VSMF970011X01	VISHAY	获取价格	High Speed Infrared Emitting Diode

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