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VSC7959YD-1 PDF预览

VSC7959YD-1

更新时间: 2024-02-13 17:56:45
品牌 Logo 应用领域
VITESSE ATM异步传输模式电信光电二极管电信集成电路
页数 文件大小 规格书
14页 148K
描述
Support Circuit, 1-Func, Bipolar, PDSO16, TSSOP-16

VSC7959YD-1 技术参数

生命周期:Obsolete包装说明:TSSOP, TSSOP16,.25
Reach Compliance Code:compliantHTS代码:8542.39.00.01
风险等级:5.46JESD-30 代码:R-PDSO-G16
长度:5 mm功能数量:1
端子数量:16最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP16,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
电源:3.3/5 V认证状态:Not Qualified
座面最大高度:1.2 mm子类别:ATM/SONET/SDH ICs
标称供电电压:3.3 V表面贴装:YES
技术:BIPOLAR电信集成电路类型:ATM/SONET/SDH SUPPORT CIRCUIT
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
宽度:4.4 mmBase Number Matches:1

VSC7959YD-1 数据手册

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VSC7959  
Data Sheet  
Table 3. Loss of Signal Specifications  
Symbol  
Parameter  
Min  
Typ  
Max  
Unit Condition  
H
LOS Hystersis  
2.2  
4.0  
5.5  
dB  
H
= 20 log (V  
/V  
)
LOS  
LOS  
THD THA  
K28.5 pattern  
t
LOS Assert/Deassert Time  
LOS Assert Threshold  
1.0  
µs  
Response time for a 10dB  
change in input power  
LOS  
V
15  
mV  
mV  
R
= 5.6k, f = 2.5Gb/s,  
THA  
THD  
TH  
K28.5 pattern  
V
LOS Deassert Threshold  
35  
R
TH  
= 5.6k, f = 2.5Gb/s,  
K28.5 pattern  
V
V
LOS Output HIGH Voltage  
LOS Output LOW Voltage  
2.4  
3.5  
V
V
I
I
= –30µA  
= 1.2mA  
LOSH  
LOS  
LOS  
0.3  
LOSL  
Table 4. Loss of Signal Truth Table  
SQUELCH  
HIGH  
LOS  
LOW  
HIGH  
HIGH  
LOW  
Output  
On  
LOW  
On  
HIGH  
Off  
LOW  
On  
Table 5. Recommended Operating Conditions  
Symbol  
Parameter  
Min  
Typ  
Max  
Unit  
V
Condition  
V
Power Supply Voltage for 3.3V Operation  
Power Supply Voltage for 5V Operation  
Junction Temperature Range  
+3.135  
+3.135  
–40  
+3.3  
+5.0  
+5.5  
+5.5  
+100  
+85  
CC_3.3  
CC_5  
J
V
V
T
T
°C  
°C  
(1)  
OperatingTemperature Range  
–40  
1. Lower limit of specification is ambient temperature and upper limit is case temperature  
Table 6. Absolute Maximum Ratings  
Symbol Parameter  
Min  
Max  
+6  
Unit  
V
Condition  
V
Power Supply Voltage  
–0.5  
CC  
Voltage at IN+, IN–  
V
– 3  
V
V
+ 0.5  
V
CC  
CC  
CC  
Voltage at SQUELCH, LOS, LOS, TH, LEVEL  
Differential Input Voltage (IN+, IN–)  
Continuous Current at CML Outputs (OUT+, OUT–)  
Current into LOS, LOS  
–0.5  
+ 0.5  
V
2.5  
V
25  
mA  
mA  
°C  
°C  
V
–2  
+3  
T
T
Junction Temperature  
–55  
–55  
+125  
+150  
2500  
J
Storage Temperature  
S
V
ESD Voltage (Human Body Model)  
ESD  
Stresses listed under Absolute Maximum Ratings may be applied to devices one at a time without causing permanent damage. Functionality at or above the values  
listed is not implied. Exposure to these values for extended periods may affect device reliability.  
ELECTROSTATIC DISCHARGE  
This device can be damaged by ESD. Vitesse recommends that all integrated circuits  
be handled with appropriate precautions. Failure to observe proper handling and  
installation procedures may adversely affect reliability of the device.  
3 of 14  
G52358, Rev 4.0  
2/10/03  

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