VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
SONET/SDH 3.125Gb/s
VSC7940
Laser Diode Driver with Automatic Power Control
Symbol
Parameter
Min
Typ
Max Units
Conditions
MOD=60mA
IMOD=5mA
IBIAS/IBIASMON
IMOD/IMODMON
-480
-50
250
37
480
I
Modulation Current Stability
ppm/°C
ABIAS
AMOD
BIASMON to IBIAS Gain
MODMON to IMON Gain
29
NOTES: (1) Both I
and I
will turn off if any of the current set pins are grounded. (2) Assumes laser diode to monitor diode transfer func-
MOD
BIAS
tion does not change with temperature.
Table 3: PECL and TTL/CMOS Input/Output Specifications
Symbol
Parameter
Differential Input Voltage
Min
Typ
Max Units
1600 mVp-p (DATA+)-(DATA-)
VCC
Conditions
VID
100
VCC
-
VCC
1.32
-
-
VICM
Common-Mode Input Voltage
V
PECL-compatible
1.49
VID/4
IIN
Clock and Data Input Current
-1
10
mA
V
VIH
VIL
TTL Input High Voltage (ENABLE, LATCH)
TTL Input Low Voltage (ENABLE, LATCH)
2.0
0.8
VCC
0.44
V
VCC
0.3
-
TTL Output High Voltage (FAIL)
TTL Output Low Voltage (FAIL)
2.4
0.1
V
V
Sourcing 50µA
Sinking 100µA
Absolute Maximum Ratings(1)
Power Supply Voltage (V )............................................................................................................. -0.5V to +7V
CC
Current into BIAS.....................................................................................................................-20mA to +150mA
Current into OUT+, OUT-...............................................................................................................................TBD
Current into MD .............................................................................................................................-5mA to +5mA
Current into FAIL......................................................................................................................... -10mA to 30mA
Voltage at DATA+, DATA-, CLK+, CLK-, ENABLE, LATCH......................................... -0.5V to (V + 0.5V)
CC
Voltage at APCFILT, MODSET, BIASMAX, APCSET, MD, FAIL ............................................. -0.5V to +3.0V
Voltage at OUT+, OUT- ..................................................................................................... -0.5V to (V + 1.5V)
CC
Voltage at BIAS.................................................................................................................. -0.5V to (V + 0.5V)
CC
Continuous Power Dissipation (T = +85°C, TQFP derate 20.8mW/°C above +85°C) .........................1350mW
A
Operating Junction Temperature Range ...................................................................................... -55°C to +150°C
Storage Temperature Range ........................................................................................................ -65°C to +165°C
NOTE: (1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without caus-
ing permanent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended
periods may affect device reliability.
Recommended Operating Conditions
Positive Voltage Rail (V ).............................................................................................................................. +5V
CC
Negative Voltage Rail (GND) ............................................................................................................................ 0V
Ambient Temperature Range (T )..................................................................................................-40°C to +85°C
A
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
G52357-0, Rev 3.2
05/11/01
Page 3
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
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