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VSC7810 PDF预览

VSC7810

更新时间: 2024-02-17 00:41:33
品牌 Logo 应用领域
VITESSE 光电放大器通信
页数 文件大小 规格书
14页 160K
描述
Photodetector/Transimpedance Amplifier Family for Optical Communication

VSC7810 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:BALL LENS, TO-46, 4 PINReach Compliance Code:not_compliant
风险等级:5.27Is Samacsys:N
主体高度:3.58 mm主体长度或直径:4.7 mm
通信标准:ATM, GBE数据速率:1250 Mbps
光纤设备类型:PHOTODIODE DETECTORJESD-609代码:e0
安装特点:PANEL MOUNT最高工作温度:90 °C
最低工作温度:最大工作波长:850 nm
最小工作波长:700 nm标称工作波长:840 nm
封装形式:TO-46响应度:2.2 A/W
最大供电电压:5.5 V最小供电电压:4.5 V
标称供电电压:5 V表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)传输类型:DIGITAL
Base Number Matches:1

VSC7810 数据手册

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VITESSE  
SEMICONDUCTOR CORPORATION  
Data Sheet  
Photodetector/Transimpedance Amplifier  
Family for Optical Communication  
VSC7810  
Temperature Dependence of Operating Parameters  
This section describes the dependence of important operating parameters shown in Table 1 as a function of  
die (or equivalently junction) tempeature and power supply. In order to relate the die temperature to an equiva-  
lent case temperature, the following thermal characteristics of the package are provided (note that the thermal  
conductivity is identical for TO-46 and TO-56 package styles.  
Table 5: Thermal Resistance Calculation for TO-56 and TO-46 Packages  
Chip Size  
0.168cm x 0.104cm  
0.015cm2  
Thermal Path  
Chip Area A  
Die Height (TDIE  
TJ  
)
0.066cm  
θGaAs  
Epoxy Thickness (TEPOXY  
Header Thickness (THEADER  
(Average for TO-46 and TO-56 package)  
)
0.0076cm  
)
0.115cm  
θEXPOXY  
Thermal Conductivities  
K GaAs  
K epoxy  
K kovar  
0.55W/cm °C  
0.0186W/cm °C  
0.17W/cm °C  
θKOVAR  
TC  
T
die  
0.066  
=
=
= 8 °C/W  
θGaAs  
0.55 x 0.015  
K
GaAs  
A
T
epoxy  
0.0076  
=
=
=
=
= 27.24 °C/W  
= 47 °C/W  
θepoxy  
0.0186 x 0.015  
K
epoxy  
A
T
kovar  
0.12  
θkovar  
0.17 x 0.015  
K
kovar  
A
θJC  
= Thermal Resistance from Junction to Case = (8 + 27.24 + 47) = 82.24 °C/W  
Example:  
For VSC7810 at nominal supply current of 25mA and Vss = 5V  
Temperature rise from junction to case = 0.025A x 5V x 82.24 °C/W = 10.28 °C  
G52145-0, Rev 4.1  
04/05/01  
Page 5  
© VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012  
Tel: (800) VITESSE FAX: (805) 987-5896 Email: prodinfo@vitesse.com  
Internet: www.vitesse.com  

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