VSC7810

更新时间： 2024-10-28 08:18:27

品牌	Logo	应用领域
VITESSE		光电放大器通信
页数	文件大小	规格书
14页	160K
描述
Photodetector/Transimpedance Amplifier Family for Optical Communication

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VSC7810 数据手册

VITESSE

SEMICONDUCTOR CORPORATION

Data Sheet

Photodetector/Transimpedance Amplifier

Family for Optical Communication

VSC7810

Temperature Dependence of Operating Parameters

This section describes the dependence of important operating parameters shown in Table 1 as a function of

die (or equivalently junction) tempeature and power supply. In order to relate the die temperature to an equiva-

lent case temperature, the following thermal characteristics of the package are provided (note that the thermal

conductivity is identical for TO-46 and TO-56 package styles.

Table 5: Thermal Resistance Calculation for TO-56 and TO-46 Packages

Chip Size

0.168cm x 0.104cm

0.015cm²

Thermal Path

Chip Area A

Die Height (T_DIE

T_J

)

0.066cm

θ_GaAs

Epoxy Thickness (T_EPOXY

Header Thickness (T_HEADER

(Average for TO-46 and TO-56 package)

)

0.0076cm

)

0.115cm

θ_EXPOXY

Thermal Conductivities

K GaAs

K epoxy

K kovar

0.55W/cm °C

0.0186W/cm °C

0.17W/cm °C

θ_KOVAR

T_C

die

0.066

= 8 °C/W

θ_GaAs

0.55 x 0.015

GaAs

epoxy

0.0076

= 27.24 °C/W

= 47 °C/W

θ_epoxy

0.0186 x 0.015

epoxy

kovar

0.12

θ_kovar

0.17 x 0.015

kovar

θ_JC

= Thermal Resistance from Junction to Case = (8 + 27.24 + 47) = 82.24 °C/W

Example:

For VSC7810 at nominal supply current of 25mA and Vss = 5V

Temperature rise from junction to case = 0.025A x 5V x 82.24 °C/W = 10.28 °C

G52145-0, Rev 4.1

04/05/01

Page 5

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

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