5秒后页面跳转
VSC7807-X PDF预览

VSC7807-X

更新时间: 2024-01-01 07:03:23
品牌 Logo 应用领域
VITESSE 光电放大器通信
页数 文件大小 规格书
10页 141K
描述
Photodiode Detector, 700nm Min, 850nm Max, 2500Mbps, Panel Mount, DIE-6

VSC7807-X 技术参数

生命周期:TransferredReach Compliance Code:compliant
风险等级:5.25主体高度:1.04 mm
主体长度或直径:1.68 mm通信标准:ATM, GBE
数据速率:2500 Mbps光纤设备类型:PHOTODIODE DETECTOR
安装特点:PANEL MOUNT最高工作温度:100 °C
最低工作温度:最大工作波长:850 nm
最小工作波长:700 nm标称工作波长:840 nm
响应度:4 A/W最大供电电压:3.6 V
最小供电电压:3 V标称供电电压:3.3 V
表面贴装:NO传输类型:DIGITAL
Base Number Matches:1

VSC7807-X 数据手册

 浏览型号VSC7807-X的Datasheet PDF文件第2页浏览型号VSC7807-X的Datasheet PDF文件第3页浏览型号VSC7807-X的Datasheet PDF文件第4页浏览型号VSC7807-X的Datasheet PDF文件第5页浏览型号VSC7807-X的Datasheet PDF文件第6页浏览型号VSC7807-X的Datasheet PDF文件第7页 
VITESSE  
SEMICONDUCTOR CORPORATION  
Advance Product Information  
Photodetector/Transimpedance Amplifier  
Family for Optical Communication  
VSC7807  
Features  
Integrated Photodetector/Transimpedance Amplifier  
Optimized for High-Speed Optical Communications  
Applications  
Applications  
Gigabit Ethernet Optical Receivers  
Fibre Channel Optical Receivers  
ATM Optical Receivers  
SONET/SDH  
Fibre Channel/Gigabit Ethernet-Compatible  
High Bandwidth: 1300MHz  
System Interconnect  
Low Input Noise Equivalent Power: 2.2µW  
Large Optically Active Area  
Single 3.3V Power Supply  
2.125Gb/s Data Rate  
70µm Optically Active Area  
Packages: TO-46, TO-56, Bare Die  
General Description  
The VSC7807 integrated Photodetector/Transimpedance Amplifier provides a highly integrated solution  
for converting 850nm light from a fiber optic communications channel into a differential output voltage. The  
benefits of Vitesse Semiconductor’s Gallium Arsenide H-GaAs process are fully utilized to provide very high  
bandwidth and low noise in a product with a large optically active area for easy alignment. The sensitivity, duty  
cycle distortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. The  
VSC7807 is available in either die form, flat-windowed packages or ball-lens packages.  
By using a Metal-Semiconductor-Metal (MSM) photodetector with a monolithic integrated transimpedance  
amplifier, the input capacitance is lowered which allows for a larger optically active area than in discrete photo-  
detectors. Integration also allows superior tracking over process, temperature and voltage between the photode-  
tector and the amplifier, resulting in higher performance. The VSC7807 can easily be used in developing Fibre  
Channel Electro-Optic Receivers which exhibit very high performance and ease of use.  
VSC7807 Block Diagram  
+3.3V  
DOUTP  
DOUTN  
Both DOUTP and DOUTN are back-terminated to 25.  
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012  
G52363-0, Rev 2.1  
04/05/01  
Page 1  
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com  
Internet: www.vitesse.com  

与VSC7807-X相关器件

型号 品牌 描述 获取价格 数据表
VSC7809 VITESSE Photodetector/Transimpedance Amplifier Family for Optical Communication

获取价格

VSC7809WA VITESSE Photodetector/Transimpedance Amplifier Family for Optical Communication

获取价格

VSC7809WB VITESSE Photodetector/Transimpedance Amplifier Family for Optical Communication

获取价格

VSC7809WC VITESSE Photodetector/Transimpedance Amplifier Family for Optical Communication

获取价格

VSC7809WD VITESSE Photodetector/Transimpedance Amplifier Family for Optical Communication

获取价格

VSC7809X VITESSE Photodetector/Transimpedance Amplifier Family for Optical Communication

获取价格