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VSC7809WA

更新时间： 2024-02-23 03:50:06
品牌 Logo 应用领域
VITESSE 光纤光电放大器异步传输模式ATM通信
页数 文件大小 规格书
10页 144K
描述
Photodetector/Transimpedance Amplifier Family for Optical Communication

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VSC7809WA 技术参数

生命周期：Contact ManufacturerReach Compliance Code：compliant
风险等级：5.82主体高度：1.04 mm
主体长度或直径：1.68 mm通信标准：ATM, GBE
数据速率：1250 Mbps光纤设备类型：PHOTODIODE DETECTOR
安装特点：PANEL MOUNT最高工作温度：100 °C
最低工作温度：最大工作波长：850 nm
最小工作波长：700 nm标称工作波长：840 nm
响应度：1.2 A/W最大供电电压：5.5 V
最小供电电压：4.5 V标称供电电压：5 V
表面贴装：NO传输类型：DIGITAL
Base Number Matches：1

VSC7809WA 数据手册

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VITESSE  
SEMICONDUCTOR CORPORATION  
Advance Product Information  
Photodetector/Transimpedance Amplifier  
Family for Optical Communication  
VSC7809  
Features  
• Integrated Photodetector/Transimpedance  
Amplifier Optimized for High-Speed Optical  
Communications Applications  
• Low Input Noise Equivalent Power  
• Large Optically Active Area  
• Single 3.3V Power Supply  
• Fibre Channel/Gigabit Ethernet Compatible  
• High Bandwidth  
Bandwidth  
(MHz)  
Input Noise  
(µW rms)  
Optically Active Area  
Part Number  
Data Rate  
(µm diameter)  
VSC7809  
1.25Gb/s  
800  
1.4  
100  
General Description  
The VSC7809 integrated Photodetector/Transimpedance Amplifier provides a highly integrated solution  
for converting light from a fiber optic communications channel into a differential output voltage. The benefits  
of Vitesse Semiconductor’s Gallium Arsenide H-GaAs process are fully utilized to provide very high bandwidth  
and low noise in a product with a large optically active area for easy alignment. The sensitivity, duty cycle dis-  
tortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. Parts are  
available in either die form, flat-windowed packages or in ball-lens packages.  
By using a metal-semiconductor-metal (MSM) photodetector with a monolithic integrated transimpedance  
amplifier, the input capacitance is lowered which allows for a larger optically active area than in discrete photo-  
detectors. Integration also allows superior tracking over process, temperature and voltage between the photode-  
tector and the amplifier, resulting in higher performance. This part can easily be used in developing Fibre  
Channel Electro-Optic Receivers which exhibit very high performance and ease of use.  
VSC7809 Block Diagram  
Photodetector/Transimpedance Amplifier  
+3.3V  
DOUTP  
DOUTN  
GND  
Both DOUTP and DOUTN are back-terminated to 25Ω.  
G52195-0, Rev 2.4  
04/05/01  
Page 1  
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012  
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com  
Internet: www.vitesse.com  
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