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VSC7810 PDF预览

VSC7810

更新时间: 2024-02-25 21:53:39
品牌 Logo 应用领域
VITESSE 光电放大器通信
页数 文件大小 规格书
14页 160K
描述
Photodetector/Transimpedance Amplifier Family for Optical Communication

VSC7810 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:BALL LENS, TO-46, 4 PINReach Compliance Code:not_compliant
风险等级:5.27Is Samacsys:N
主体高度:3.58 mm主体长度或直径:4.7 mm
通信标准:ATM, GBE数据速率:1250 Mbps
光纤设备类型:PHOTODIODE DETECTORJESD-609代码:e0
安装特点:PANEL MOUNT最高工作温度:90 °C
最低工作温度:最大工作波长:850 nm
最小工作波长:700 nm标称工作波长:840 nm
封装形式:TO-46响应度:2.2 A/W
最大供电电压:5.5 V最小供电电压:4.5 V
标称供电电压:5 V表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)传输类型:DIGITAL
Base Number Matches:1

VSC7810 数据手册

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VITESSE  
SEMICONDUCTOR CORPORATION  
Data Sheet  
Photodetector/Transimpedance Amplifier  
Family for Optical Communication  
VSC7810  
Features  
Integrated Photodetector/Transimpedance  
High Bandwidth  
Amplifier Optimized for High-Speed Optical  
Communications Applications  
Low Input Noise Equivalent Power  
Large Optically Active Area  
Single 5V Power Supply  
Integrated AGC  
Fibre Channel/Gigabit Ethernet Compatible  
Bandwidth  
(MHz)  
Input Noise  
(µW rms)  
Optically Active Area  
Part Number  
Data Rate  
(µm diameter)  
VSC7810  
Full Speed: 1.25Gb/s  
1200  
0.45  
100  
General Description  
The VSC7810 integrated Photodetector/Transimpedance Amplifier provides a highly integrated solution  
for converting light from a fiber optic communications channel into a differential output voltage. The benefits  
of Vitesse Semiconductor’s Gallium Arsenide H-GaAs process are fully utilized to provide very high bandwidth  
and low noise in a product with a large optically active area for easy alignment. The sensitivity, duty cycle dis-  
tortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. Parts are  
available in either die form, flat-windowed packages or in ball-lens packages.  
By using a metal-semiconductor-metal (MSM) photodetector with a monolithic integrated transimpedance  
amplifier, the input capacitance is lowered which allows for a larger optically active area than in discrete photo-  
detectors. Integration also allows superior tracking over process, temperature and voltage between the photode-  
tector and the amplifier, resulting in higher performance. This part can easily be used in developing Fibre  
Channel Electro-Optic Receivers which exhibit very high performance and ease of use.  
VSC7810 Block Diagram  
Photodetector/Transimpedance Amplifier  
+3.3V  
DOUTP  
DOUTN  
GND  
Both DOUTP and DOUTN are back-terminated to 25Ω.  
G52145-0, Rev 4.1  
04/05/01  
Page 1  
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012  
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com  
Internet: www.vitesse.com  

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