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VSC7807-X PDF预览

VSC7807-X

更新时间: 2024-02-15 23:39:38
品牌 Logo 应用领域
VITESSE 光电放大器通信
页数 文件大小 规格书
10页 141K
描述
Photodiode Detector, 700nm Min, 850nm Max, 2500Mbps, Panel Mount, DIE-6

VSC7807-X 技术参数

生命周期:TransferredReach Compliance Code:compliant
风险等级:5.25主体高度:1.04 mm
主体长度或直径:1.68 mm通信标准:ATM, GBE
数据速率:2500 Mbps光纤设备类型:PHOTODIODE DETECTOR
安装特点:PANEL MOUNT最高工作温度:100 °C
最低工作温度:最大工作波长:850 nm
最小工作波长:700 nm标称工作波长:840 nm
响应度:4 A/W最大供电电压:3.6 V
最小供电电压:3 V标称供电电压:3.3 V
表面贴装:NO传输类型:DIGITAL
Base Number Matches:1

VSC7807-X 数据手册

 浏览型号VSC7807-X的Datasheet PDF文件第1页浏览型号VSC7807-X的Datasheet PDF文件第3页浏览型号VSC7807-X的Datasheet PDF文件第4页浏览型号VSC7807-X的Datasheet PDF文件第5页浏览型号VSC7807-X的Datasheet PDF文件第6页浏览型号VSC7807-X的Datasheet PDF文件第7页 
VITESSE  
SEMICONDUCTOR CORPORATION  
Advance Product Information  
Photodetector/Transimpedance Amplifier  
Family for Optical Communication  
VSC7807  
Table 1: Electro-Optical Specifications(1)  
Symbol  
Parameters  
Supply Voltage  
Min  
Typ(2)  
Max  
Units  
Conditions  
VSS  
IDD  
3.0  
-
3.3  
-
3.6  
40  
V
Supply Current  
mA  
Frequencies up to 40MHz.  
PSRR  
Power Supply Rejection Ratio  
-
-10  
-
dB  
Use external filter to get PSRR  
of -35dB(3)  
.
λ
Wavelength  
700  
840  
1.0  
850  
nm  
MHz  
MHz  
dBm  
Fc  
BW  
S
Low Frequency Cutoff  
Optical Modulation Bandwidth  
Sensitivity  
-
-
-
-
2.5  
-3dB, P(4) = -15dBm  
-3dB, P = -15dBm  
2.488Gb/s, BER10-12(5)  
1300  
20  
-
-
-
Ro  
Single-Ended Output Impedance  
25  
P = -5 dBm,  
RL= 100differential  
VD  
RD  
Differential Output Voltage  
Differential Responsivity  
0.2  
1.6  
-
-
-
V
RL = 100Ω  
At 50MHz  
2.0  
mV/µW  
VDC  
Output Bias Voltage  
1.0  
-
-
-
V
VDC  
NEPO  
VNO  
Bias Offset Voltage  
-
-
200  
2.2  
1.25  
4.5  
-
mV  
Input Noise Equivalent Power  
Output Noise Voltage  
Duty Cycle Distortion  
Output Drive Current  
1
µW rms P = 0mW  
-
-
mV rms P = 0mW  
DCD  
IOUT  
-
-
%
P = -5dBm  
P = -5dBm  
2.0  
2.6  
mA  
P = -5dBm  
+/-10% Voltage Window  
PDJ  
Pattern Dependent Jitter  
-
-
40  
ps  
Optically Active Area  
PP Jitter  
-
-
-
-
70  
190  
-
-
µm  
ps  
Diameter  
PPJ  
TR  
TF  
200  
200  
200  
P = -5dBm  
Rise Time  
ps  
20% to 80% P = -5dBm  
20% to 80% P = -5dBm  
Fall Time  
-
ps  
NOTES: (1) Specified over 10°C to 90°C junction. (2) Typical conditions 25°C and 3.3V power supply. (3) See Note 1 in Appli-  
cation Note 48. (4) P = Incident Optical Power. (5) See Note 2 In Application Note 48.  
© VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012  
Tel: (800) VITESSE FAX: (805) 987-5896 Email: prodinfo@vitesse.com  
Internet: www.vitesse.com  
Page 2  
G52363-0, Rev 2.1  
04/05/01  

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