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VS28F016SV PDF预览

VS28F016SV

更新时间: 2024-11-22 22:15:23
品牌 Logo 应用领域
英特尔 - INTEL /
页数 文件大小 规格书
50页 611K
描述
16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY

VS28F016SV 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:0.620 X 1.640 INCH, PLASTIC, DIP-32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.84最长访问时间:150 ns
其他特性:100000 ERASE/PROGRAM CYCLES命令用户界面:YES
数据轮询:NO耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDIP-T32JESD-609代码:e0
长度:41.91 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:32
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP32,.6
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:12 V
认证状态:Not Qualified座面最大高度:4.83 mm
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.03 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:NO类型:NOR TYPE
宽度:15.24 mmBase Number Matches:1

VS28F016SV 数据手册

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VS28F016SV, MS28F016SV  
16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY  
Y
Y
Y
VS28F016SV  
Configurable x8 or x16 Operation  
56-Lead SSOP Plastic Package  
b
Ð SE2 Grade  
a
Ð
40 C to 125 C  
§
§
Y
Y
Backwards-Compatible with VE28F008,  
M28F008 and 28F016SA Command Set  
MS28F016SV  
b
Ð QML Certified  
a
55 C to 125 C  
Ð
§
§
Y
Revolutionary Architecture  
Ð Multiple Command Execution  
Ð Write During Erase  
Ð Command Super-Set of the Intel  
VE28F008, M28F008  
Ð Page Buffer Write  
Ð SE1 Grade  
Y
Y
SmartVoltage Technology  
Ð User-Selectable 3.3V or 5V V  
Ð User-Selectable 5V or 12V V  
CC  
PP  
Three Voltage/Speed Options  
g
Ð 85 ns Access Time, 5.0V 10%  
Y
Y
Y
Multiple Power Savings Modes  
Two 256-Byte Page Buffers  
Ð 80 ns Access Time, 5.0V 5%  
g
g
Ð 120 ns Access Time, 3.3V 10%  
State-of-the-Art 0.6 mm ETOXTM IV  
Flash Technology  
Y
Y
1 Million Erase Cycles per Block  
Typical  
14.3 MB/sec Burst Write Transfer Rate  
Intel’s VS/MS28F016SV, 16-Mbit FlashFiIeTM Memory is the latest member of Intel’s high density, high per-  
formance memory family for the Industrial, Special Environment, and Military markets. Its user selectable V  
and V  
CC  
(SmartVoltage Technology), innovative capabilities, 100% compatibility with the VE28F008 and  
PP  
M28F008, multiple power savings modes, selective block locking, and very fast read/write performance make  
it the ideal choice for any applications that need a high density and a wide temperature range memory device.  
The VS/MS28F016SV is the ideal choice for designers who need to break free from the dependence on slow  
rotating media or battery backed up memory arrays.  
b
a
b
a
40 C to 125 C) available, the  
With two product grades (SE1:  
55 C to  
§
125 C, and SE2:  
§
§
§
VS/MS28F016SV is perfect for the non-PC industries like Telecommunications, Embedded/Industrial, Auto-  
motive, Navigation, Wireless Communication, Commercial Aircraft, and all Military programs.  
The VS/MS28F016SV’s x8/x16 architecture allows for the optimization of the memory to processor interface.  
The flexible block locking options enable bundling of executable application software in a Resident Flash Array  
(RFA), PCMCIA Memory or ATA Cards or Memory modules.  
The VS/MS28F016SV is offered in a 56-lead SS0P (Shrink Small Outline Package) and is manufactured on  
Intel’s 0.6 mm ETOXTM IV process technology.  
*Other brands and names are the property of their respective owners.  
Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or  
copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make  
changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.  
©
COPYRIGHT INTEL CORPORATION, 1995  
December 1995  
Order Number: 271312-002  

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