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VS-VSKD19604PBF

更新时间: 2024-02-02 23:32:17
品牌 Logo 应用领域
威世 - VISHAY 局域网高电压电源高压二极管
页数 文件大小 规格书
13页 271K
描述
Rectifier Diode, 1 Phase, 2 Element, 195A, 400V V(RRM), Silicon, ROHS COMPLIANT, INT-A-PAK-7/3

VS-VSKD19604PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, INT-A-PAK-7/3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.74其他特性:UL RECOGNIZED
应用:HIGH VOLTAGE POWER外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.38 V
JESD-30 代码:R-PUFM-X3最大非重复峰值正向电流:4980 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:195 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:400 V
最大反向电流:20000 µA表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
Base Number Matches:1

VS-VSKD19604PBF 数据手册

 浏览型号VS-VSKD19604PBF的Datasheet PDF文件第3页浏览型号VS-VSKD19604PBF的Datasheet PDF文件第4页浏览型号VS-VSKD19604PBF的Datasheet PDF文件第5页浏览型号VS-VSKD19604PBF的Datasheet PDF文件第7页浏览型号VS-VSKD19604PBF的Datasheet PDF文件第8页浏览型号VS-VSKD19604PBF的Datasheet PDF文件第9页 
VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series  
www.vishay.com  
Vishay Semiconductors  
4500  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
5000  
At any rated load condition and with  
rated VRRM applied following surge.  
Initial TJ = 150 °C  
Maximum non-repetitive surge current  
versus pulse train duration.  
Initial TJ = 150 °C  
4500  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
at 60 Hz 0.0083 s  
at 50 Hz 0.0100 s  
No voltage reapplied  
Rated VRRM reapplied  
VSK.196.. Series  
VSK.196.. Series  
1
10  
100  
0.01  
0.1  
1.0  
Number of Equal Amplitude Half  
Cycle Current Pulses (N)  
Pulse Train Duration (s)  
Fig. 14 - Maximum Non-Repetitive Surge Current  
Fig. 15 - Maximum Non-Repetitive Surge Current  
350  
350  
300  
250  
200  
150  
100  
50  
300  
250  
200  
150  
100  
50  
DC  
VSK.196.. Series  
Per junction  
TJ = 150 °C  
0
0
0
50  
100  
150  
200  
250  
300  
0
25  
50  
75  
100  
125  
150  
Total RMS Output Current (A)  
Maximum Allowable Ambient Temperature (°C)  
Fig. 16 - On-State Power Loss Characteristics  
1200  
1000  
800  
600  
400  
200  
0
1200  
1000  
800  
+
-
180°  
(Sine)  
180°  
~
(Rect)  
600  
400  
2 x VSK.196.. Series  
Single phase bridge  
Connected  
200  
0
TJ = 150 °C  
125  
0
100  
200  
300  
400  
0
25  
50  
75  
100  
150  
Maximum Allowable Ambient Temperature (°C)  
Total Output Current (A)  
Fig. 17 - On-State Power Loss Characteristics  
Revision: 10-Apr-14  
Document Number: 94357  
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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