5秒后页面跳转
VS-VSKD19604PBF PDF预览

VS-VSKD19604PBF

更新时间: 2024-02-01 22:11:54
品牌 Logo 应用领域
威世 - VISHAY 局域网高电压电源高压二极管
页数 文件大小 规格书
13页 271K
描述
Rectifier Diode, 1 Phase, 2 Element, 195A, 400V V(RRM), Silicon, ROHS COMPLIANT, INT-A-PAK-7/3

VS-VSKD19604PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, INT-A-PAK-7/3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.74其他特性:UL RECOGNIZED
应用:HIGH VOLTAGE POWER外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.38 V
JESD-30 代码:R-PUFM-X3最大非重复峰值正向电流:4980 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:195 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:400 V
最大反向电流:20000 µA表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
Base Number Matches:1

VS-VSKD19604PBF 数据手册

 浏览型号VS-VSKD19604PBF的Datasheet PDF文件第2页浏览型号VS-VSKD19604PBF的Datasheet PDF文件第3页浏览型号VS-VSKD19604PBF的Datasheet PDF文件第4页浏览型号VS-VSKD19604PBF的Datasheet PDF文件第6页浏览型号VS-VSKD19604PBF的Datasheet PDF文件第7页浏览型号VS-VSKD19604PBF的Datasheet PDF文件第8页 
VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series  
www.vishay.com  
Vishay Semiconductors  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
1600  
1400  
~
120°  
(Rect)  
1200  
1000  
800  
600  
400  
200  
0
-
3 x VSK.166.. Series  
Three phase bridge  
Connected  
TJ = 150 °C  
0
0
0
100  
200  
300  
400  
500  
0
25  
50  
75  
100  
125  
150  
Total Output Current (A)  
Maximum Allowable Ambient Temperature (°C)  
Fig. 9 - On-State Power Loss Characteristics  
150  
140  
130  
120  
110  
100  
90  
300  
180°  
120°  
90°  
60°  
30°  
VSK.196.. Series  
thJC (DC) = 0.16 K/W  
R
250  
200  
150  
100  
50  
Ø
RMS limit  
Conduction angle  
Ø
30°  
Conduction angle  
60°  
90°  
VSK.196.. Series  
TJ = 150 °C  
120°  
80  
180°  
200  
70  
0
50  
100  
150  
250  
0
40  
80  
120  
160  
200  
Average Forward Current (A)  
Average Forward Current (A)  
Fig. 10 - Current Ratings Characteristics  
Fig. 12 - On-State Power Loss Characteristics  
150  
140  
130  
120  
110  
100  
90  
350  
300  
250  
200  
150  
100  
50  
VSK.196.. Series  
thJC (DC) = 0.16 K/W  
DC  
180°  
120°  
90°  
60°  
30°  
R
RMS limit  
Ø
Conduction period  
Ø
30°  
Conduction period  
60°  
90°  
VSK.196.. Series  
Per junction  
120°  
180°  
80  
TJ = 150 °C  
DC  
70  
0
50  
100  
150  
200  
250  
300  
350  
0
50  
100  
150  
200  
250  
300  
350  
Average Forward Current (A)  
Fig. 11 - Current Ratings Characteristics  
Average Forward Current (A)  
Fig. 13 - On-State Power Loss Characteristics  
Revision: 10-Apr-14  
Document Number: 94357  
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与VS-VSKD19604PBF相关器件

型号 品牌 描述 获取价格 数据表
VS-VSKD19612PBF VISHAY Rectifier Diode, 1 Phase, 2 Element, 195A, 1200V V(RRM), Silicon, ROHS COMPLIANT, INT-A-PA

获取价格

VS-VSKD19616PBF VISHAY Rectifier Diode, 1 Phase, 2 Element, 195A, 1600V V(RRM), Silicon, ROHS COMPLIANT, INT-A-PA

获取价格

VS-VSKD1964PBF VISHAY Rectifier Diode,

获取价格

VS-VSKD1968PBF VISHAY Rectifier Diode,

获取价格

VS-VSKD236/04PBF VISHAY RECTIFIER DIODE

获取价格

VS-VSKD236/08PBF VISHAY RECTIFIER DIODE

获取价格